FDP

FDP2710-F085 vs FDP2710 vs FDP2D3N10C

 
PartNumberFDP2710-F085FDP2710FDP2D3N10C
DescriptionMOSFET 250V NCHAN PwrTrenchMOSFET 250V N-Channel PowerTrenchMOSFET PTNG 100/20V inTO220 3L JEDEC GREEN EMC
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage250 V250 V100 V
Id Continuous Drain Current50 A50 A222 A
Rds On Drain Source Resistance38 mOhms42 mOhms2.1 mOhms
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 175 C
Pd Power Dissipation403 W260 W214 W
ConfigurationSingleSingleSingle
QualificationAEC-Q101--
TradenamePowerTrenchPowerTrench-
PackagingTubeTubeTube
Height16.3 mm16.3 mm-
Length10.67 mm10.67 mm-
SeriesFDP2710_F085FDP2710FDP2D3N10C
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.7 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesFDP2710_F085--
Unit Weight0.063493 oz0.063493 oz0.063493 oz
Vgs Gate Source Voltage-30 V20 V
Channel Mode-EnhancementEnhancement
Fall Time-154 ns32 ns
Rise Time-252 ns35 ns
Typical Turn Off Delay Time-112 ns74 ns
Typical Turn On Delay Time-80 ns42 ns
Vgs th Gate Source Threshold Voltage--2 V
Qg Gate Charge--152 nC
Forward Transconductance Min--222 S
  • -ден бастаңыз
  • FDP 605
Өндіруші Бөлім № Сипаттама RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDP33N25 MOSFET 250V N-Channel MOSFET
FDP2710-F085 MOSFET 250V NCHAN PwrTrench
FDP2710 MOSFET 250V N-Channel PowerTrench
FDP3672 MOSFET 105V 41a 0.033 Ohms/VGS=10V
FDP39N20 MOSFET SINGLE N-CH 200V ULTRAFET TRENCH
FDP3632 MOSFET 100V 80a .9 Ohms/VGS=1V
FDP3652 MOSFET 100V 61a 0.016 Ohm
FDP2D3N10C MOSFET PTNG 100/20V inTO220 3L JEDEC GREEN EMC
FDP3682 MOSFET 100V 32a .36Ohm/VGS=1V
FDP3651U MOSFET 100V 80A 15 OHM NCH POWER TREN
FDP3205 MOSFET 55V N-Channel PowerTrench
ON Semiconductor
ON Semiconductor
FDP3651U Darlington Transistors MOSFET 100V 80A 15 OHM NCH POWER TREN
FDP3672 MOSFET N-CH 105V 41A TO-220AB
FDP3682 Darlington Transistors MOSFET 100V 32a .36Ohm/VGS=1V
FDP3632 MOSFET N-CH 100V 80A TO-220AB
FDP3652 MOSFET N-CH 100V 61A TO-220AB
FDP26N40 MOSFET N-CH 400V 26A TO-220
FDP2710 MOSFET N-CH 250V 50A TO-220
FDP2710-F085 MOSFET N-CH 250V 4A TO-220
FDP2D3N10C MOSFET N-CH 100V 222A TO220-3
FDP3205 MOSFET N-CH 55V 100A TO-220
FDP33N25 MOSFET N-CH 250V 33A TO-220
FDP34N33 MOSFET N-CH 330V 34A TO-220
FDP39N20 MOSFET N-CH 200V 39A TO-220
FDP2710F085 Power Field-Effect Transistor, 4A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
FDP304P Жаңа және түпнұсқа
FDP30N06 Жаңа және түпнұсқа
FDP33N25(A14) Жаңа және түпнұсқа
FDP36035AL Жаңа және түпнұсқа
FDP3632 80N10 Жаңа және түпнұсқа
FDP3632,FDP3682,FDP038AN Жаңа және түпнұсқа
FDP3632,FDP3682,FDP038AN06AO,FDP025N06, Жаңа және түпнұсқа
FDP3632,FDP3682,FDP3205, Жаңа және түпнұсқа
FDP3651 Жаңа және түпнұсқа
FDP3651U TO-220 Жаңа және түпнұсқа
FDP3652T Жаңа және түпнұсқа
FDP3652_NL Жаңа және түпнұсқа
FDP3672-NL Жаңа және түпнұсқа
FDP3682NL Жаңа және түпнұсқа
FDP3832 Жаңа және түпнұсқа
FDP39N20(SG) Жаңа және түпнұсқа
FDP39N20-07 Жаңа және түпнұсқа
FDP3682_Q MOSFET 100V 32a .36Ohm/VGS=1V
FDP3682_SN00090 Жаңа және түпнұсқа
FDP3632_Q MOSFET 100V 80a .9 Ohms/VGS=1V
FDP3652_Q MOSFET 100V 61a 0.016 Ohm
FDP2XSZAM63R262X Жаңа және түпнұсқа
FDP2710_F085 250V N-CHANNEL POWERTRENCH MOS
FDP3632-NL Жаңа және түпнұсқа
FDP2XPZAM63R262X Жаңа және түпнұсқа
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