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FDP3652

FDP3652
Mfr. #:
FDP3652
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
MOSFET 100V 61a 0.016 Ohm
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
FDP3652 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-220-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
100 V
Идентификатор - үздіксіз төгу тогы:
61 A
Rds On - ағызу көзіне қарсылық:
14 mOhms
Vgs - Шлюз көзі кернеуі:
20 V
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
150 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Түтік
Биіктігі:
16.3 mm
Ұзындығы:
10.67 mm
Серия:
FDP3652
Транзистор түрі:
1 N-Channel
Түрі:
MOSFET
Ені:
4.7 mm
Бренд:
ON Semiconductor / Fairchild
Күз уақыты:
45 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
85 ns
Зауыттық буманың саны:
800
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
26 ns
Қосудың әдеттегі кешігу уақыты:
12 ns
Бөлім # Бүркеншік аттар:
FDP3652_NL
Бірлік салмағы:
0.063493 oz
Tags
FDP3652, FDP365, FDP36, FDP3, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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*** Source Electronics
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***eco
FDP3652.,3 LD PLASTIC W/EXPOSE D HEATSNK <AZ
***ser
MOSFETs 100V, 61a, 0.016 Ohm
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.014Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:150W; No. Of Pins:3Pins Rohs Compliant: Yes
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:61A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Avalanche Single Pulse Energy Eas:182mJ; Current, Idm Pulse:70A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation:150W; Power, Pd:150W; Power, Ptot:150W; Resistance, Rds on @ Vgs = 10V:0.014ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, trr Typ:62ns; Transistors, No. of:1; Typ Capacitance Ciss:2880pF; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:182mJ; Capacitance Ciss Typ:2880pF; Current Id Max:61A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:14mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation Ptot Max:150W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:62ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Бөлім № Mfg. Сипаттама Қор Бағасы
FDP3652
DISTI # V36:1790_06359472		ON SemiconductorFET 100V 16.0 MOHM TO22012113
  • 5000:$0.7903
  • 2500:$0.7990
  • 1000:$0.8540
  • 500:$1.0174
  • 100:$1.1278
  • 10:$1.4022
  • 1:$1.6158
FDP3652
DISTI # V79:2366_18816080		ON SemiconductorFET 100V 16.0 MOHM TO220222
  • 5000:$0.7903
  • 2500:$0.7990
  • 1000:$0.8540
  • 500:$1.0174
  • 100:$1.1278
  • 10:$1.4022
  • 1:$1.6158
FDP3652
DISTI # FDP3652-ND		ON SemiconductorMOSFET N-CH 100V 61A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Bulk		30In Stock
  • 1000:$1.2530
  • 500:$1.5123
  • 100:$1.9444
  • 10:$2.4200
  • 1:$2.6800
FDP3652
DISTI # 26163598		ON SemiconductorFET 100V 16.0 MOHM TO22012113
  • 5000:$0.7903
  • 2500:$0.7990
  • 1000:$0.8540
  • 500:$1.0174
  • 100:$1.1278
  • 10:$1.4022
  • 8:$1.6158
FDP3652
DISTI # 26122911		ON SemiconductorFET 100V 16.0 MOHM TO220222
  • 5000:$0.7903
  • 2500:$0.7990
  • 1000:$0.8540
  • 500:$1.0174
  • 100:$1.1278
  • 15:$1.4022
FDP3652
DISTI # 30702593		ON SemiconductorFET 100V 16.0 MOHM TO22032
  • 16:$0.6217
FDP3652
DISTI # FDP3652		ON SemiconductorTrans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP3652)
RoHS: Compliant
Min Qty: 288
Container: Bulk		Americas - 0
  • 288:$0.8099
  • 290:$0.8049
  • 578:$0.7939
  • 1440:$0.7839
  • 2880:$0.7649
FDP3652
DISTI # FDP3652		ON SemiconductorTrans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP3652)
RoHS: Compliant
Min Qty: 800		Asia - 0
  • 800:$1.3662
  • 1600:$1.3136
  • 2400:$1.2650
  • 4000:$1.2198
  • 8000:$1.1778
  • 20000:$1.1385
  • 40000:$1.1198
FDP3652
DISTI # FDP3652		ON SemiconductorTrans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP3652)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.0067
  • 1600:$1.0001
  • 3200:$0.9873
  • 4800:$0.9748
  • 8000:$0.9507
FDP3652
DISTI # FDP3652		ON SemiconductorTrans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP3652)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.9299
  • 10:€0.8269
  • 25:€0.7439
  • 50:€0.6759
  • 100:€0.6199
  • 500:€0.5719
FDP3652.
DISTI # 15AC2932		Fairchild Semiconductor CorporationTransistor Polarity:N Channel,Continuous Drain Current Id:61A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:150W,No. of Pins:3Pins RoHS Compliant: Yes12
  • 8000:$0.9500
  • 4800:$0.9740
  • 3200:$0.9870
  • 1600:$1.0000
  • 1:$1.0100
FDP3652
DISTI # 512-FDP3652		ON SemiconductorMOSFET 100V 61a 0.016 Ohm
RoHS: Compliant		7
  • 1:$2.3100
  • 10:$1.9600
  • 100:$1.5700
  • 500:$1.3700
  • 1000:$1.1300
FDP3652_Q
DISTI # 512-FDP3652_Q		ON SemiconductorMOSFET 100V 61a 0.016 Ohm
RoHS: Not compliant		0
    FDP3652Fairchild Semiconductor CorporationPower Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		2464
    • 1000:$1.1300
    • 500:$1.1900
    • 100:$1.2400
    • 25:$1.2900
    • 1:$1.3900
    FDP3652Fairchild Semiconductor CorporationPower Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		Europe - 624
      FDP3652
      DISTI # 1017692      		ON SemiconductorMOSFET, N, TO-220
      RoHS: Compliant      		0
      • 500:$1.5800
      • 100:$1.8100
      • 10:$2.2600
      • 1:$2.6500
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      Қол жетімділік
      Қор:
      752
      Тапсырыс бойынша:
      2735
      Саны енгізіңіз:
      FDP3652 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      1,72 $
      1,72 $
      10
      1,46 $
      14,60 $
      100
      1,17 $
      117,00 $
      500
      1,02 $
      510,00 $
      1000
      0,85 $
      849,00 $
      2500
      0,84 $
      2 092,50 $
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