 |  | | |
| PartNumber | DMG9933USD-13 | DMG9933USD | DMG9933USD-13-F |
| Description | MOSFET P-Ch Dual MOSFE 20V VDSS 12V VGSS | ||
| Manufacturer | Diodes Incorporated | DIODES | DIODES |
| Product Category | MOSFET | FETs - Arrays | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4.6 A | - | - |
| Rds On Drain Source Resistance | 55 mOhms, 55 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 6.5 nC, 6.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.15 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMG9933 | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 22.19 ns, 22.19 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10.29 ns, 10.29 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 46.52 ns, 46.52 ns | - | - |
| Typical Turn On Delay Time | 12.45 ns, 12.45 ns | - | - |
| Unit Weight | 0.002610 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG9933USD-13 | MOSFET P-Ch Dual MOSFE 20V VDSS 12V VGSS | |
| DMG9933USD | Жаңа және түпнұсқа | ||
| DMG9933USD-13-F | Жаңа және түпнұсқа | ||
| DMG9933USD-13 | MOSFET N-Ch Dual MOSFET 20V VDSS 12V VGSS |