 |  | | |
| PartNumber | CSD17311Q5 | CSD17311 | CSD17311Q5A |
| Description | MOSFET 30V N-Channel NexFET Power MOSFET | ||
| Manufacturer | Texas Instruments | Texas Instruments | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | VSON-Clip-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 2.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 24 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 3.2 W | - | - |
| Configuration | Single | Single | - |
| Tradename | NexFET | NexFET | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1 mm | - | - |
| Length | 6 mm | - | - |
| Series | CSD17311Q5 | NexFET | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | 30V N-Channel NexFET Power MOSFET | - | - |
| Width | 5 mm | - | - |
| Brand | Texas Instruments | - | - |
| Forward Transconductance Min | 200 S | - | - |
| Fall Time | 12 ns | 12 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns | 18 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33 ns | 33 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Unit Weight | 0.004078 oz | - | - |
| Package Case | - | 8-PowerTDFN | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-VSON (5x6) | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 3.2W | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 4280pF @ 15V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 32A (Ta), 100A (Tc) | - |
| Rds On Max Id Vgs | - | 2 mOhm @ 30A, 8V | - |
| Vgs th Max Id | - | 1.6V @ 250μA | - |
| Gate Charge Qg Vgs | - | 31nC @ 4.5V | - |
| Pd Power Dissipation | - | 3.2 W | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Id Continuous Drain Current | - | 32 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
| Rds On Drain Source Resistance | - | 2.3 mOhms | - |
| Qg Gate Charge | - | 24 nC | - |
| Forward Transconductance Min | - | 200 S | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Texas Instruments |
CSD17311Q5 | MOSFET 30V N-Channel NexFET Power MOSFET | |
| CSD17311 | Жаңа және түпнұсқа | ||
| CSD17311Q5A | Жаңа және түпнұсқа | ||
| CSD17311Q5 | MOSFET N-CH 30V 100A 8SON |