 |  |  | |
| PartNumber | CGHV35150F | CGHV35060MP | CGHV35150-TB |
| Description | RF JFET Transistors GaN HEMT 2.9-3.5GHz, 150 Watt | RF JFET Transistors GaN HEMT 2.7-3.1GHz, 60 Watt | RF Development Tools Test Board without GaN HEMT |
| Manufacturer | Cree, Inc. | Cree, Inc. | Cree, Inc. |
| Product Category | RF JFET Transistors | RF JFET Transistors | RF Development Tools |
| RoHS | Y | Y | N |
| Transistor Type | HEMT | HEMT | - |
| Technology | GaN | GaN | - |
| Gain | 15 dB | 14.5 dB | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 120 V | 150 V | - |
| Vgs Gate Source Breakdown Voltage | - 10 V to 2 V | - 10 V, 2 V | - |
| Id Continuous Drain Current | 4.5 A | 10.4 A | - |
| Output Power | 45 W | 75 W | - |
| Maximum Drain Gate Voltage | - | 50 V | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 107 C | + 150 C |
| Pd Power Dissipation | - | 52 W | - |
| Mounting Style | Screw Mount | SMD/SMT | - |
| Package / Case | 440193 | - | - |
| Packaging | Tray | Reel | Bulk |
| Application | - | S Band Radar and LTE base stations | - |
| Configuration | Single | Single | - |
| Height | 4.19 mm | - | - |
| Length | 20.46 mm | - | - |
| Operating Frequency | 2 GHz to 4 GHz | 3.5 GHz | - |
| Operating Temperature Range | - | - 40 C to + 107 C | - |
| Product | GaN HEMT | - | Demonstration Boards |
| Width | 5.97 mm | - | - |
| Brand | Wolfspeed / Cree | Wolfspeed / Cree | Wolfspeed / Cree |
| Forward Transconductance Min | - | - | - |
| Gate Source Cutoff Voltage | - | - | - |
| Class | - | - | - |
| Development Kit | CGH40035F-TB | - | - |
| Fall Time | - | - | - |
| NF Noise Figure | - | - | - |
| P1dB Compression Point | - | - | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | RF Development Tools |
| Rds On Drain Source Resistance | - | - | - |
| Rise Time | - | - | - |
| Factory Pack Quantity | 120 | 250 | 2 |
| Subcategory | Transistors | Transistors | Development Tools |
| Typical Turn Off Delay Time | - | - | - |
| Vgs th Gate Source Threshold Voltage | - 3 V | - 3 V | - |
| Type | - | - | RF Transistors |
| Tool Is For Evaluation Of | - | - | CGHV35150 |
| Frequency | - | - | 2.9 GHz to 3.5 GHz |
| Operating Supply Voltage | - | - | - |
| Description/Function | - | - | Demonstration board for CGHV35150 |
| Dimensions | - | - | - |
| Interface Type | - | - | - |
| For Use With | - | - | CGHV35150 |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
N/A |
CGHV35150F | RF JFET Transistors GaN HEMT 2.9-3.5GHz, 150 Watt | |
| CGHV35400F | RF JFET Transistors GaN HEMT 2.9-3.5GHz, 400 Watt | ||
| CGHV35060MP | RF JFET Transistors GaN HEMT 2.7-3.1GHz, 60 Watt | ||
| CGHV35150-TB | RF Development Tools Test Board without GaN HEMT | ||
| CGHV35150-TB | TEST FIXTURE FOR CGHV35150F | ||
| CGHV35400F-TB | TEST FIXTURE FOR CGHV35400F | ||
| CGHV35150F | RF MOSFET HEMT 50V 440193 | ||
| CGHV35400F | RF MOSFET HEMT 45V 440210 | ||
| CGHV35060MP | RF MOSFET HEMT 50V 20TSSOP | ||
| CGHV3510F | Жаңа және түпнұсқа | ||
| CGHV35150 | Жаңа және түпнұсқа |