BSP603S2L

BSP603S2L vs BSP603S2L .. vs BSP603S2L H6327

 
PartNumberBSP603S2LBSP603S2L ..BSP603S2L H6327
DescriptionMOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current5.2 A--
Rds On Drain Source Resistance33 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameOptiMOS--
PackagingReel--
Height1.6 mm--
Length6.5 mm--
ProductMOSFET Small Signal--
Transistor Type1 N-Channel--
Width3.5 mm--
BrandInfineon Technologies--
Fall Time16 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time28 ns--
Typical Turn On Delay Time10.8 ns--
Part # AliasesBSP603S2LHUMA1 BSP63S2LXT SP000431792--
Unit Weight0.003951 oz--
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
BSP603S2L MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS
BSP603S2LHUMA1 MOSFET N-CH 55V 5.2A SOT-223
Infineon Technologies
Infineon Technologies
BSP603S2LHUMA1 MOSFET N-CHANNEL_55/60V
BSP603S2L .. Жаңа және түпнұсқа
BSP603S2L H6327 Жаңа және түпнұсқа
BSP603S2LGRN Жаңа және түпнұсқа
BSP603S2LNT Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP603S2L MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS
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