We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSP603S2LHUMA1 DISTI # BSP603S2LHUMA1-ND | Infineon Technologies AG | MOSFET N-CH 55V 5.2A SOT-223 RoHS: Not compliant Min Qty: 4000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP603S2L DISTI # BSP603S2L | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A 4-Pin SOT-223 T/R (Alt: BSP603S2L) RoHS: Not Compliant Min Qty: 4000 Container: Tape and Reel | Asia - 20000 |
|
| BSP603S2L DISTI # SP000431792 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A 4-Pin SOT-223 T/R (Alt: SP000431792) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel | Europe - 0 |
|
| BSP603S2LHUMA1 DISTI # BSP603S2LHUMA1 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP603S2LHUMA1) RoHS: Compliant Min Qty: 4000 Container: Reel | Americas - 0 |
|
| BSP603S2L DISTI # 726-BSP603S2L | Infineon Technologies AG | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS RoHS: Compliant | 0 | |
| BSP603S2LNT | Infineon Technologies AG | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 83663 |
|
| BSP603S2LHUMA1 DISTI # 4622935 | Infineon Technologies AG | MOSFET N-CHANNEL 55V 5.2A SOT223, PK | 820 |
|
| BSP603S2LHUMA1 DISTI # 4622935P | Infineon Technologies AG | MOSFET N-CHANNEL 55V 5.2A SOT223, RL | 12511 |
|
| BSP603S2L DISTI # BSP603S2L | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,55V,5.2A,1.8W,SOT223 | 4215 |
|
| BSP603S2L | Infineon Technologies AG | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 1395 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BSP603S2L OMO.#: OMO-BSP603S2L |
MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS |
|
|
Mfr.#: BSP603S2LHUMA1 OMO.#: OMO-BSP603S2LHUMA1 |
MOSFET N-CHANNEL_55/60V |
|
Mfr.#: BSP603S22 OMO.#: OMO-BSP603S22-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSP603S2L .. OMO.#: OMO-BSP603S2L--1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSP603S2L H6327 OMO.#: OMO-BSP603S2L-H6327-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSP603S2LGRN OMO.#: OMO-BSP603S2LGRN-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: BSP603S2LHUMA1 |
MOSFET N-CH 55V 5.2A SOT-223 |
|
|
Mfr.#: BSP603S2LNT OMO.#: OMO-BSP603S2LNT-1190 |
Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP603S2L OMO.#: OMO-BSP603S2L-128 |
MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS |
