 |  | | |
| PartNumber | BSP321PH6327XTSA1 | BSP321PH6327 | BSP321PH6327XTSA1782 |
| Description | MOSFET SIPMOS Sm-Signal 900mOhm -100V 980mA | - Bulk (Alt: BSP321PH6327XTSA1782) | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 980 mA | - | - |
| Rds On Drain Source Resistance | 900 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 1.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP321 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 1.2 S | - | - |
| Fall Time | 8.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.4 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16.5 ns | - | - |
| Typical Turn On Delay Time | 5.9 ns | - | - |
| Part # Aliases | BSP321P H6327 SP001058782 | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP321PH6327XTSA1 | MOSFET SIPMOS Sm-Signal 900mOhm -100V 980mA | |
| BSP321PH6327XTSA1 | MOSFET P-CH 100V 980MA SOT223 | ||
| BSP321PH6327 | Жаңа және түпнұсқа | ||
| BSP321PH6327XTSA1782 | - Bulk (Alt: BSP321PH6327XTSA1782) |