 | |  | |
| PartNumber | BSP300H6327XUSA1 | BSP300 H6327 | BSP300 E6327 |
| Description | MOSFET N-Ch 800V 190mA SOT-223-3 | MOSFET N-Ch 800V 190mA SOT-223-3 | MOSFET N-CH 800V 190MA SOT-223 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-SOT-223-4 | SOT-223-4 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | - |
| Id Continuous Drain Current | 190 mA | 190 mA | - |
| Rds On Drain Source Resistance | 20 Ohms | 15 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | - | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.8 W | 1.8 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 1.6 mm | 1.6 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | BSP300 | BSP300 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.5 mm | 3.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 60 mS | 60 mS | - |
| Fall Time | 21 ns | 21 ns | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 16 ns | 16 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 27 ns | 27 ns | - |
| Typical Turn On Delay Time | 7 ns | 7 ns | - |
| Part # Aliases | BSP300 H6327 SP001058720 | BSP300H6327XUSA1 SP001058720 | - |
| Unit Weight | 0.003951 oz | 0.003951 oz | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Nexperia |
BSP31,115 | Bipolar Transistors - BJT TRANS MED PWR TAPE-7 | |
| BSP31,115 | TRANS PNP 60V 1A SOT223 | ||
Infineon Technologies |
BSP315P H6327 | MOSFET P-Ch -60V -1.17A SOT-223-3 | |
| BSP315PH6327XTSA1 | MOSFET P-Ch -60V -1.17A SOT-223-3 | ||
| BSP300H6327XUSA1 | MOSFET N-Ch 800V 190mA SOT-223-3 | ||
| BSP300 H6327 | MOSFET N-Ch 800V 190mA SOT-223-3 | ||
| BSP300 E6327 | MOSFET N-CH 800V 190MA SOT-223 | ||
| BSP300H6327XUSA1 | MOSFET N-CH 800V 190MA SOT-223 | ||
| BSP300L6327HUSA1 | MOSFET N-CH 800V 190MA SOT-223 | ||
| BSP315P-E6327 | MOSFET P-CH 60V 1.17A SOT-223 | ||
| BSP315PH6327XTSA1 | MOSFET P-CH 60V 1.17A SOT-223 | ||
| BSP315PL6327HTSA1 | MOSFET P-CH 60V 1.17A SOT-223 | ||
| BSP315PE6327T | MOSFET P-CH 60V 1.17A SOT-223 | ||
| BSP31.115 | Transistor: PNP, bipolar, 60V, 1A, 1.3W, SOT223 | ||
| BSP30 | Жаңа және түпнұсқа | ||
| BSP300 | Жаңа және түпнұсқа | ||
| BSP300 H6327 | Trans MOSFET N-CH 800V 0.19A Automotive 4-Pin(3+Tab) SOT-223 T/R | ||
| BSP300 L6327 | MOSFET, N CHANNEL, 800V, 190mA, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:190mA, Drain Source Voltage Vds:800V, On Resistance Rds(on):15ohm, Rds(on) Test Voltage Vgs:10V | ||
| BSP300L6327 | 800V,0.19A,N channel Power MOSFET | ||
| BSP304 | Жаңа және түпнұсқа | ||
| BSP304A | Жаңа және түпнұсқа | ||
| BSP306 | Жаңа және түпнұсқа | ||
| BSP308 | Жаңа және түпнұсқа | ||
| BSP31 | 1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET | ||
| BSP31115 | Now Nexperia BSP31 - Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin | ||
| BSP315 | Жаңа және түпнұсқа | ||
| BSP315 E6327 | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP315 E6327 , TEA1792AT | Жаңа және түпнұсқа | ||
| BSP315 E6433 | Жаңа және түпнұсқа | ||
| BSP315E-6327 | 1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET | ||
| BSP315E-6327,1N4148W-7-F | Жаңа және түпнұсқа | ||
| BSP315E-6433 | INSTOCK | ||
| BSP315P | P CHANNEL MOSFET, -60V, 1.17A, SOT-223, Transistor Polarity:P Channel, Continuous Drain Current Id:1.17A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):0.8ohm, Rds(on) Test Voltage Vgs:-10 | ||
| BSP315P L6327 | Жаңа және түпнұсқа | ||
| BSP315P E6327 | Жаңа және түпнұсқа | ||
| BSP315P E6918 | Жаңа және түпнұсқа | ||
| BSP315P H6327 | MOSFET P-Ch -60V -1.17A SOT-223-3 | ||
| BSP315PE6327 | Жаңа және түпнұсқа | ||
| BSP315PH6327 | Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP315PL6327 | POWER FIELD-EFFECT TRANSISTOR, 1.17A I(D), 60V, 0.8OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| BSP315PL6327XT | Жаңа және түпнұсқа | ||
| BSP316 | Жаңа және түпнұсқа | ||
| BSP316 / BSP316 | Жаңа және түпнұсқа | ||
| BSP316 E6327 | Жаңа және түпнұсқа | ||
| BSP316 L6327 | Жаңа және түпнұсқа | ||
| BSP316E6327 | Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP315 E6918 | Жаңа және түпнұсқа | ||
| BSP300H6327XUSA1-CUT TAPE | Жаңа және түпнұсқа | ||
| BSP315PH6327XTSA1-CUT TAPE | Жаңа және түпнұсқа | ||
NXP Semiconductors |
BSP304A,126 | MOSFET P-CH 300V 0.17A SOT54 |