BSB044N08NN3

BSB044N08NN3 G vs BSB044N08NN3 G3 vs BSB044N08NN3G

 
PartNumberBSB044N08NN3 GBSB044N08NN3 G3BSB044N08NN3G
DescriptionMOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT--
Package / CaseWDSON-2-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance3.7 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge73 nC--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation78 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS-OptiMOS
PackagingReel-Reel
Height0.7 mm--
Length6.35 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel-1 N-Channel
Width5.05 mm--
BrandInfineon Technologies--
Forward Transconductance Min36 S--
Fall Time7 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesBSB044N08NN3GXUMA1 BSB44N8NN3GXT SP000604542--
Part Aliases--BSB044N08NN3 BSB044N08NN3GXT G SP000604542
Package Case--WDSON-2
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
BSB044N08NN3 G MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
BSB044N08NN3GXUMA1 MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
BSB044N08NN3GXUMA1 MOSFET N-CH 80V 18A WDSON-2
BSB044N08NN3 G3 Жаңа және түпнұсқа
BSB044N08NN3G Жаңа және түпнұсқа
BSB044N08NN3GTR Жаңа және түпнұсқа
BSB044N08NN3 G MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
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