BSB044N08NN

BSB044N08NN3 G vs BSB044N08NN3GXUMA1

 
PartNumberBSB044N08NN3 GBSB044N08NN3GXUMA1
DescriptionMOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseWDSON-2-3WDSON-2-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage80 V80 V
Id Continuous Drain Current90 A90 A
Rds On Drain Source Resistance3.7 mOhms3.7 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge73 nC73 nC
Minimum Operating Temperature- 40 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation78 W78 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height0.7 mm0.7 mm
Length6.35 mm6.35 mm
SeriesOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel
Width5.05 mm5.05 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min36 S36 S
Fall Time7 ns7 ns
Moisture SensitiveYesYes
Product TypeMOSFETMOSFET
Rise Time9 ns9 ns
Factory Pack Quantity50005000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time26 ns26 ns
Typical Turn On Delay Time14 ns14 ns
Part # AliasesBSB044N08NN3GXUMA1 BSB44N8NN3GXT SP000604542BSB044N08NN3 BSB44N8NN3GXT G SP000604542
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
BSB044N08NN3 G MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
BSB044N08NN3GXUMA1 MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
BSB044N08NN3GXUMA1 MOSFET N-CH 80V 18A WDSON-2
BSB044N08NN3 G MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
BSB044N08NN Жаңа және түпнұсқа
BSB044N08NN3G Жаңа және түпнұсқа
BSB044N08NN3 G3 Жаңа және түпнұсқа
BSB044N08NN3GTR Жаңа және түпнұсқа
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