 |  | | |
| PartNumber | APT50GN60BDQ2G | APT50GN60BD | APT50GN60BDQ2 |
| Description | IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS | ||
| Manufacturer | Microchip | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum Gate Emitter Voltage | 30 V | - | - |
| Continuous Collector Current at 25 C | 107 A | - | - |
| Pd Power Dissipation | 366 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 107 A | - | - |
| Height | 5.31 mm | - | - |
| Length | 21.46 mm | - | - |
| Operating Temperature Range | - 55 C to + 175 C | - | - |
| Width | 16.26 mm | - | - |
| Brand | Microchip / Microsemi | - | - |
| Continuous Collector Current | 107 A | - | - |
| Gate Emitter Leakage Current | 600 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 1.340411 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT50GN60BDQ2G | IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS | |
| APT50GN60BDQ2G | IGBT Transistors | ||
| APT50GN60BD | Жаңа және түпнұсқа | ||
| APT50GN60BDQ2 | Жаңа және түпнұсқа | ||
| APT50GN60BDQ2G IKW50N6 | Жаңа және түпнұсқа |