PartNumber | 2N7002DWH6327XTSA1 | 2N7002DWH6327XT | 2N7002DWH6327 |
Description | MOSFET N-Ch 60V 300mA SOT-363-6 | MOSFET N-Ch 60V 300mA SOT-363-6 | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.3A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-363-6 | SOT-363-6 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 300 mA | 300 mA | - |
Rds On Drain Source Resistance | 1.6 Ohms | 1.6 Ohms | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 600 pC, 600 pC | 600 pC, 600 pC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | - |
Height | 0.9 mm | 0.9 mm | - |
Length | 2 mm | 2 mm | - |
Series | 2N7002 | 2N7002 | - |
Transistor Type | 2 N-Channel | 2 N-Channel | - |
Width | 1.25 mm | 1.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 200 mS, 200 mS | 200 mS, 200 mS | - |
Fall Time | 3.1 ns, 3.1 ns | 3.1 ns, 3.1 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3.3 ns, 3.3 ns | 3.3 ns, 3.3 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 5.5 ns, 5.5 ns | 5.5 ns, 5.5 ns | - |
Typical Turn On Delay Time | 3 ns, 3 ns | 3 ns, 3 ns | - |
Part # Aliases | 2N7002DW 2N72DWH6327XT H6327 SP000917596 | 2N7002DWH6327XTSA1 SP000917596 | - |
Unit Weight | 0.000265 oz | 0.000265 oz | - |