BSS169H6327XTSA1 vs BSS169 H6327 vs BSS169H6327XT


PartNumber	BSS169H6327XTSA1	BSS169 H6327	BSS169H6327XT
Description	MOSFET N-Ch 100V 90mA SOT-23-3	MOSFET N-Ch 100V 90mA SOT-23-3	MOSFET N-Ch 100V 90mA SOT-23-3
Manufacturer	Infineon	Infineon	Infineon
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	PG-SOT-23-3	PG-SOT-23-3	PG-SOT-23-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	100 V	100 V	100 V
Id Continuous Drain Current	90 mA	90 mA	90 mA
Rds On Drain Source Resistance	6 Ohms	6 Ohms	6 Ohms
Vgs th Gate Source Threshold Voltage	2.9 V	2.9 V	2.9 V
Vgs Gate Source Voltage	10 V	10 V	10 V
Qg Gate Charge	2.1 nC	2.1 nC	2.1 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	360 mW	360 mW	360 mW
Configuration	Single	Single	Single
Channel Mode	Depletion	Depletion	Depletion
Qualification	AEC-Q101	AEC-Q101	AEC-Q101
Packaging	Reel	Reel	Reel
Height	1.1 mm	1.1 mm	1.1 mm
Length	2.9 mm	2.9 mm	2.9 mm
Product	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal
Series	BSS169	BSS169	BSS169
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Type	SIPMOS Small Signal Transistor	SIPMOS Small Signal Transistor	SIPMOS Small Signal Transistor
Width	1.3 mm	1.3 mm	1.3 mm
Brand	Infineon Technologies	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	0.1 S	0.1 S	0.1 S
Fall Time	27 ns	27 ns	27 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	2.7 ns	2.7 ns	2.7 ns
Factory Pack Quantity	3000	3000	3000
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	11 ns	11 ns	11 ns
Typical Turn On Delay Time	2.9 ns	2.9 ns	2.9 ns
Part # Aliases	BSS169 BSS169H6327XT H6327 SP000702572	BSS169H6327XT BSS169H6327XTSA1 SP000702572	BSS169 BSS169H6327XTSA1 H6327 SP000702572
Unit Weight	0.000282 oz	0.000282 oz	0.000282 oz