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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSC205N10LS G DISTI # BSC205N10LSGTR-ND | Infineon Technologies AG | MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC205N10LS G DISTI # BSC205N10LSGCT-ND | Infineon Technologies AG | MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC205N10LS G DISTI # BSC205N10LSGDKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC205N10LSG | Infineon Technologies AG | Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 6751 |
|
| BSC205N10LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 10000 |
|
| BSC205N10LS G | Infineon Technologies AG | RoHS: Not Compliant | 10000 |
|
| BSC205N10LS G DISTI # 726-BSC205N10LSG | Infineon Technologies AG | MOSFET N-Ch 100V 7.4A TDSON-8 RoHS: Compliant | 0 | |
| BSC205N10LSG | Infineon Technologies AG | 7.4 A, 100 V, 0.0205 ohm, N-CHANNEL, Si, POWER, MOSFET | 4899 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BSC200N15NS3G OMO.#: OMO-BSC200N15NS3G-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSC200N15NSG OMO.#: OMO-BSC200N15NSG-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: BSC200P03LS G OMO.#: OMO-BSC200P03LS-G-1190 |
MOSFET P-Ch -30V -12.5A TDSON-8 OptiMOS P |
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Mfr.#: BSC200P03LSG OMO.#: OMO-BSC200P03LSG-1190 |
Power Field-Effect Transistor, 9.9A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC200P03LSGAUMA1 |
MOSFET P-CH 30V 12.5A TDSON-8 |
|
|
Mfr.#: BSC205N10LS OMO.#: OMO-BSC205N10LS-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSC205N10LSG OMO.#: OMO-BSC205N10LSG-1190 |
Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC205N10LSGATMA1 OMO.#: OMO-BSC205N10LSGATMA1-1190 |
Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSC20N025S OMO.#: OMO-BSC20N025S-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: BSC205N10LS G |
IGBT Transistors MOSFET N-Ch 100V 7.4A TDSON-8 |