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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSC205N10LS G DISTI # BSC205N10LSGTR-ND | Infineon Technologies AG | MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC205N10LS G DISTI # BSC205N10LSGCT-ND | Infineon Technologies AG | MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC205N10LS G DISTI # BSC205N10LSGDKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC205N10LS G DISTI # 726-BSC205N10LSG | Infineon Technologies AG | MOSFET N-Ch 100V 7.4A TDSON-8 RoHS: Compliant | 0 | |
| BSC205N10LSG | Infineon Technologies AG | Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 6751 |
|
| BSC205N10LS G | Infineon Technologies AG | RoHS: Not Compliant | 10000 |
|
| BSC205N10LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 10000 |
|
| BSC205N10LSG | Infineon Technologies AG | 7.4 A, 100 V, 0.0205 ohm, N-CHANNEL, Si, POWER, MOSFET | 4899 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BSC205N10LS G OMO.#: OMO-BSC205N10LS-G |
MOSFET N-Ch 100V 7.4A TDSON-8 |
|
Mfr.#: BSC205N10LS OMO.#: OMO-BSC205N10LS-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSC205N10LSG OMO.#: OMO-BSC205N10LSG-1190 |
Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC205N10LSGATMA1 OMO.#: OMO-BSC205N10LSGATMA1-1190 |
Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC205N10LS G |
IGBT Transistors MOSFET N-Ch 100V 7.4A TDSON-8 |
