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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| RF1S70N06SM9A DISTI # 512-RF1S70N06SM9A | ON Semiconductor | MOSFET TO-263 RoHS: Not compliant | 0 | |
| RF1S70N06SM DISTI # 512-RF1S70N06SM | ON Semiconductor | MOSFET TO-263 RoHS: Not compliant | 0 | |
| RF1S70N06SM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 3200 |
|
| RF1S70N06SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 1600 |
|
| RF1S70N06 | Harris Semiconductor | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 256 |
|
| RF1S70N06SM | Harris Semiconductor | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 6785 |
|
| RF1S70N06SM9A | Fairchild Semiconductor Corporation | 73 | ||
| RF1S70N06SM9A | Harris Semiconductor | 640 |
| |
| RF1S70N06SM | f | RoHS: Not Compliant | 350 | |
| RF1S70N06DPAK | HARTING Technology Group | RoHS: Not Compliant | 2000 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: RF1S 3R3J OMO.#: OMO-RF1S-3R3J-1190 |
Жаңа және түпнұсқа |
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Mfr.#: RF1S23N06LESM OMO.#: OMO-RF1S23N06LESM-1190 |
Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S25N06SMR4643 OMO.#: OMO-RF1S25N06SMR4643-1190 |
Жаңа және түпнұсқа |
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Mfr.#: RF1S30N06LESM OMO.#: OMO-RF1S30N06LESM-1190 |
Жаңа және түпнұсқа |
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Mfr.#: RF1S42N03LSM OMO.#: OMO-RF1S42N03LSM-1190 |
42 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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Mfr.#: RF1S45N03LSNM9A OMO.#: OMO-RF1S45N03LSNM9A-1190 |
Жаңа және түпнұсқа |
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Mfr.#: RF1S50N06 OMO.#: OMO-RF1S50N06-1190 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S60P03SM OMO.#: OMO-RF1S60P03SM-1190 |
MOSFET Transistor, P-Channel, TO-263AB |
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Mfr.#: RF1S630 OMO.#: OMO-RF1S630-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S70N03SM OMO.#: OMO-RF1S70N03SM-1190 |
Жаңа және түпнұсқа |
