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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| RF1S60P03SM9A | Intersil Corporation | 32 | ||
| RF1S60P03SM | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-263AB | 15 | |
| RF1S60P03SM9A | Harris Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 30V, 0.027OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 237 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: RF1S60P03 OMO.#: OMO-RF1S60P03-1190 |
Жаңа және түпнұсқа |
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Mfr.#: RF1S60P03SM OMO.#: OMO-RF1S60P03SM-1190 |
MOSFET Transistor, P-Channel, TO-263AB |
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Mfr.#: RF1S60P03SM9A OMO.#: OMO-RF1S60P03SM9A-1190 |
POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 30V, 0.027OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB |
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Mfr.#: RF1S630 OMO.#: OMO-RF1S630-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S630SM OMO.#: OMO-RF1S630SM-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S640 OMO.#: OMO-RF1S640-1190 |
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S640SM OMO.#: OMO-RF1S640SM-1190 |
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-263AB - Bulk (Alt: RF1S640SM) |
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Mfr.#: RF1S640SM9A9A OMO.#: OMO-RF1S640SM9A9A-1190 |
Жаңа және түпнұсқа |
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Mfr.#: RF1S640SM9A_NL OMO.#: OMO-RF1S640SM9A-NL-1190 |
Жаңа және түпнұсқа |
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Mfr.#: RF1S640SMA OMO.#: OMO-RF1S640SMA-1190 |
Жаңа және түпнұсқа |