SI1922EDH-T1-GE3

Mfr. #:: SI1922EDH-T1-GE3
Өндіруші:: Vishay
Сипаттама:: MOSFET 2N-CH 20V 1.3A SOT-363
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: SI1922EDH-T1-GE3 Деректер тізімі
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Көбірек ақпарат:: SI1922EDH-T1-GE3 Көбірек ақпарат

Өнім атрибуты
Төлсипат мәні

Өндіруші: ВИШАЙ

Өнім санаты: IC чиптері

Сериялар: TrenchFETR

Қаптама: Digi-ReelR балама орамасы

Бөлік бүркеншік аттар: SI1988DH-T1-GE3

Бірлік-салмағы: 0.000265 oz

Монтаждау стилі: SMD/SMT

Пакет-қорап: 6-TSSOP, SC-88, SOT-363

Технология: Си

Жұмыс температурасы: -55°C ~ 150°C (TJ)

Монтаждау түрі: Беттік орнату

Арналар саны: 2 Channel

Жабдықтаушы-құрылғы-пакет: SC-70-6 (SOT-363)

Конфигурация: Қосарлы

FET түрі: 2 N-Channel (Dual)

Қуат – Макс: 1.25W

Транзистор түрі: 2 N-Channel

Ағызу-көзге-кернеу-Vdss: 20V

Кіріс-сыйымдылық-Ciss-Vds: -

FET мүмкіндігі: Логикалық деңгей қақпасы

Ағымдағы-Үздіксіз-ағызу-Id-25°C: 1.3A

Rds-On-Max-Id-Vgs: 198 mOhm @ 1A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Charge-Qg-Vgs: 2.5nC @ 8V

Pd-қуат-диссипация: 1.25 W

Максималды-жұмыс температурасы: + 150 C

Ең төменгі жұмыс температурасы: - 55 C

Күз уақыты: 220 ns

Көтерілу уақыты: 80 ns

Vgs-қақпа-көзі-кернеу: 8 V

Id-үздіксіз-ағызу-ток: 1.3 A

Vds-ағызу-көз-бұзу-кернеу: 20 V

Vgs-th-Gate-Көзі-Табалдырық-кернеу: 1 V

Rds-On-Drain-Source-Resistance: 198 mOhms

Транзистор-полярлық: N-арна

Әдеттегі-өшіру-кідірту уақыты: 480 ns

Әдеттегі-қосу-кешігу-уақыты: 43 ns

Qg-Gate-Заряд: 1.6 nC

Tags: SI1922EDH-T1, SI1922EDH-T, SI1922, SI192, SI19, SI1

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1922EDH-T1-GE3 Көбірек ақпарат

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
SI1922EDH-T1-GE3 DISTI # V36:1790_09216775	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R RoHS: Compliant	0	3000000:$0.1227 1500000:$0.1229 300000:$0.1315 30000:$0.1444 3000:$0.1465
SI1922EDH-T1-GE3 DISTI # V72:2272_09216775	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R RoHS: Compliant	0
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SOT-363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	40575In Stock	1000:$0.1655 500:$0.2141 100:$0.2725 10:$0.3650 1:$0.4300
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SOT-363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	40575In Stock	1000:$0.1655 500:$0.2141 100:$0.2725 10:$0.3650 1:$0.4300
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SOT-363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	39000In Stock	75000:$0.1197 30000:$0.1210 15000:$0.1276 6000:$0.1370 3000:$0.1465
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R (Alt: SI1922EDH-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	150000:$0.1178 75000:$0.1198 30000:$0.1219 15000:$0.1263 9000:$0.1309 6000:$0.1360 3000:$0.1414
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1922EDH-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.0949 18000:$0.0979 12000:$0.0999 6000:$0.1049 3000:$0.1079
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R (Alt: SI1922EDH-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1039 18000:€0.1109 12000:€0.1209 6000:€0.1399 3000:€0.2059
SI1922EDH-T1-GE3 DISTI # 65T1686	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 65T1686) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.1540 500:$0.1990 250:$0.2210 100:$0.2420 50:$0.2840 25:$0.3250 1:$0.4300
SI1922EDH-T1-GE3 DISTI # 65T1686	Vishay Intertechnologies	Dual MOSFET, Dual N Channel, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV RoHS Compliant: Yes	0	1000:$0.1560 500:$0.2010 250:$0.2230 100:$0.2440 50:$0.2860 25:$0.3280 1:$0.4340
SI1922EDH-T1-GE3 DISTI # 64T4056	Vishay Intertechnologies	MOSFET, NN CH, 20V, 1.3A, SOT363,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:1.3A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.165ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV RoHS Compliant: Yes	860	1000:$0.1840 500:$0.2290 250:$0.2510 100:$0.2720 50:$0.3140 25:$0.3560 1:$0.4620
SI1922EDH-T1-GE3. DISTI # 28AC2118	Vishay Intertechnologies	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:1.3A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.165ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:1.25W RoHS Compliant: No	0	30000:$0.0980 18000:$0.1000 12000:$0.1030 6000:$0.1080 1:$0.1110
SI1922EDH-T1-GE3 DISTI # 70616150	Vishay Siliconix	SI1922EDH-T1-GE3 Dual N-channel MOSFET Transistor,1.3 A,20 V,6-Pin SOT-363 RoHS: Compliant	0	300:$0.2700 600:$0.2320 1500:$0.2030 3000:$0.1830
SI1922EDH-T1-GE3 DISTI # 78-SI1922EDH-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs SC70-6 RoHS: Compliant	14142	1:$0.4200 10:$0.3240 100:$0.2410 500:$0.1980 1000:$0.1530 3000:$0.1390 6000:$0.1300 9000:$0.1210 24000:$0.1150
SI1922EDH-T1-GE3 DISTI # 8123091P	Vishay Intertechnologies	TRANS MOSFET N-CH 20V 1.3A 6-PIN, RL	4550	3000:£0.1100 1500:£0.1150 600:£0.1440 300:£0.1820
SI1922EDH-T1-GE3 DISTI # TMOS2002	Vishay Intertechnologies	Dual N-CH 20V 1,3A/4,5V SOT363 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.1821 6000:$0.1717 9000:$0.1612 12000:$0.1456 18000:$0.1404
SI1922EDH-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs SC70-6 RoHS: Compliant	Americas - 24000
SI1922EDH-T1-GE3 DISTI # 2056714	Vishay Intertechnologies	MOSFET, NN CH, 20V, 1.3A, SOT363 RoHS: Compliant	860	3000:$0.2280 1000:$0.2320 500:$0.3000 100:$0.3650 10:$0.4900 1:$0.6480
SI1922EDH-T1-GE3 DISTI # 2056714RL	Vishay Intertechnologies	MOSFET, NN CH, 20V, 1.3A, SOT363 RoHS: Compliant	0	3000:$0.2280 1000:$0.2320 500:$0.3000 100:$0.3650 10:$0.4900 1:$0.6480
SI1922EDH-T1-GE3 DISTI # 2056714	Vishay Intertechnologies	MOSFET, NN CH, 20V, 1.3A, SOT363	1755	500:£0.1540 250:£0.1700 100:£0.1860 25:£0.2730 5:£0.2850

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: SI1922EDH-T1-GE3 OMO.#: OMO-SI1922EDH-T1-GE3	MOSFET 20V Vds 8V Vgs SC70-6
	Mfr.#: SI1922EDH OMO.#: OMO-SI1922EDH-1190	Жаңа және түпнұсқа
	Mfr.#: SI1922EDH-T OMO.#: OMO-SI1922EDH-T-1190	Жаңа және түпнұсқа
	Mfr.#: SI1922EDH-T1-E3 OMO.#: OMO-SI1922EDH-T1-E3-1190	Жаңа және түпнұсқа
	Mfr.#: SI1922EDH-T1-GE3 OMO.#: OMO-SI1922EDH-T1-GE3-VISHAY	MOSFET 2N-CH 20V 1.3A SOT-363
	Mfr.#: SI1922EDH-T1-GE3-CUT TAPE OMO.#: OMO-SI1922EDH-T1-GE3-CUT-TAPE-1190	Жаңа және түпнұсқа

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 2500
Саны енгізіңіз:

SI1922EDH-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Анықтамалық баға (USD)

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы

1: ~~0,14 $~~; ~~0,14 $~~

10: ~~0,14 $~~; ~~1,35 $~~

100: ~~0,13 $~~; ~~12,81 $~~

500: ~~0,12 $~~; ~~60,50 $~~

1000: ~~0,11 $~~; ~~113,90 $~~

-ден бастаңыз

SI1922EDH-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes