We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
---|---|---|---|---|
SIHB22N60AE-GE3 DISTI # SIHB22N60AE-GE3-ND | Vishay Siliconix | MOSFET N-CH 600V 20A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube | 1000In Stock |
|
SIHB22N60AE-GE3 DISTI # SIHB22N60AE-GE3 | Vishay Intertechnologies | Power MOSFET N-Channel 600V 20A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N60AE-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
SIHB22N60AE-GE3 DISTI # 78-SIHB22N60AE-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 1000 |
|
SIHB22N60AEGE3 | Vishay Intertechnologies | RoHS: Compliant | 1000 |
Сурет | Бөлім № | Сипаттама |
---|---|---|
Mfr.#: SIHB22N60AEL-GE3 OMO.#: OMO-SIHB22N60AEL-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | |
Mfr.#: SIHB22N60E-GE3 OMO.#: OMO-SIHB22N60E-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | |
Mfr.#: SIHB22N60ET1-GE3 OMO.#: OMO-SIHB22N60ET1-GE3 |
MOSFET 600V Vds E Series D2PAK TO-263 | |
Mfr.#: SIHB22N65E-GE3 OMO.#: OMO-SIHB22N65E-GE3-VISHAY |
RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS | |
Mfr.#: SIHB22N60E OMO.#: OMO-SIHB22N60E-1190 |
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: SIHB22N60E-GE3 OMO.#: OMO-SIHB22N60E-GE3-VISHAY |
MOSFET N-CH 600V 21A D2PAK | |
Mfr.#: SIHB22N60ET1-GE3 OMO.#: OMO-SIHB22N60ET1-GE3-VISHAY |
MOSFET N-CH 600V 21A TO263 | |
Mfr.#: SIHB22N60S-GE3 OMO.#: OMO-SIHB22N60S-GE3-VISHAY |
MOSFET N-CH 650V TO263 | |
Mfr.#: SIHB22N60SE3 OMO.#: OMO-SIHB22N60SE3-1190 |
Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: SIHB22N60EL-GE3 OMO.#: OMO-SIHB22N60EL-GE3-VISHAY |
MOSFET N-CH 600V 21A TO263 |