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SIHB22N60ET1-GE3

SIHB22N60ET1-GE3
Mfr. #:
SIHB22N60ET1-GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET 600V Vds E Series D2PAK TO-263
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SIHB22N60ET1-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB22N60ET1-GE3 DatasheetSIHB22N60ET1-GE3 Datasheet (P4-P6)SIHB22N60ET1-GE3 Datasheet (P7-P9)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-263-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
650 V
Идентификатор - үздіксіз төгу тогы:
21 A
Rds On - ағызу көзіне қарсылық:
180 mOhms
Vgs th - Gate-Source шекті кернеуі:
4 V
Qg - қақпа заряды:
57 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
227 W
Конфигурация:
Бойдақ
Қаптама:
Ролик
Серия:
E
Транзистор түрі:
1 N-Channel
Бренд:
Вишай / Силиконикс
Күз уақыты:
35 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
27 ns
Зауыттық буманың саны:
800
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
66 ns
Қосудың әдеттегі кешігу уақыты:
18 ns
Бірлік салмағы:
0.077603 oz
Tags
SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E-Series N-Channel 600 V 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK
***S
new, original packaged
***ical
E Series Power MOSFET
***or
MOSFET N-CH 600V 21A TO263
***et
N-CHANNEL 600V
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21A; On Resistance Rds(On):0.15Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
Бөлім № Mfg. Сипаттама Қор Бағасы
SIHB22N60ET1-GE3
DISTI # V72:2272_09219036		Vishay IntertechnologiesSIHB22N60ET1-GE30
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 600V 21A TO263
    RoHS: Not compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		785In Stock
    • 100:$2.6994
    • 10:$3.2950
    • 1:$3.6700
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 600V 21A TO263
    RoHS: Not compliant
    Min Qty: 1
    Container: Digi-Reel®    		785In Stock
    • 100:$2.6994
    • 10:$3.2950
    • 1:$3.6700
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 600V 21A TO263
    RoHS: Not compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 5600:$1.7203
    • 2400:$1.7875
    • 1600:$1.8816
    • 800:$2.2310
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3    		Vishay IntertechnologiesN-CHANNEL 600V (Alt: SIHB22N60ET1-GE3)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 500:€1.6900
    • 1000:€1.6900
    • 50:€1.7900
    • 100:€1.7900
    • 25:€1.9900
    • 10:€2.4900
    • 1:€3.1900
    SIHB22N60ET1-GE3
    DISTI # SIHB22N60ET1-GE3    		Vishay IntertechnologiesN-CHANNEL 600V - Trays (Alt: SIHB22N60ET1-GE3)
    RoHS: Compliant
    Min Qty: 800
    Container: Tray    		Americas - 0
    • 8000:$1.5900
    • 4800:$1.6900
    • 3200:$1.7900
    • 1600:$1.9900
    • 800:$2.0900
    SIHB22N60ET1-GE3.
    DISTI # 61AC1922    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:227W,No. of Pins:3Pins RoHS Compliant: Yes0
    • 8000:$1.5900
    • 4800:$1.6900
    • 3200:$1.7900
    • 1600:$1.9900
    • 1:$2.0900
    SIHB22N60ET1-GE3
    DISTI # 78-SIHB22N60ET1-GE3    		Vishay IntertechnologiesMOSFET 600V Vds E Series D2PAK TO-263
    RoHS: Compliant    		637
    • 1:$3.5800
    • 10:$2.9600
    • 100:$2.4400
    • 250:$2.3600
    • 500:$2.1200
    • 800:$1.7900
    • 2400:$1.7000
    • 4800:$1.6300
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    Mfr.#: DR74-820-R

    OMO.#: OMO-DR74-820-R

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    Mfr.#: FQB33N10LTM

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    		 RES SMD 51K OHM 1% 1W 2512
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    OMO.#: OMO-DF22-2P-7-92DSA-05--HIROSE

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    Mfr.#: ZM4744A-GS08

    OMO.#: OMO-ZM4744A-GS08-VISHAY

    		 Zener Diodes 15 Volt 1 Watt 5%
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    Қол жетімділік
    Қор:
    637
    Тапсырыс бойынша:
    2620
    Саны енгізіңіз:
    SIHB22N60ET1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
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