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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 40V 21A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | On Order |
|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 40V 21A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 40V 21A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 | |
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SIR836DP-T1-GE3 DISTI # SIR836DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR836DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIR836DP-T1-GE3 DISTI # 05W6931 | Vishay Intertechnologies | MOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V , RoHS Compliant: Yes | 0 |
|
| SIR836DP-T1-GE3 DISTI # 86R3808 | Vishay Intertechnologies | MOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes | 0 |
|
| SIR836DP-T1-GE3 DISTI # 78-SIR836DP-T1-GE3 | Vishay Intertechnologies | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 446 |
|
| SIR836DPT1GE3 | Vishay Intertechnologies | RoHS: Compliant | Europe - 3000 | |
| SIR836DP-T1-GE3 | Vishay Intertechnologies | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | Americas - 51000 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SIR836DP-T1-GE3 OMO.#: OMO-SIR836DP-T1-GE3 |
MOSFET 40V Vds 20V Vgs PowerPAK SO-8 |
|
Mfr.#: SIR836DP-T1-GE3-CUT TAPE |
Жаңа және түпнұсқа |
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Mfr.#: SIR836DP OMO.#: OMO-SIR836DP-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SIR836DP-T1-E3 OMO.#: OMO-SIR836DP-T1-E3-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: SIR836DP-T1-GE3 OMO.#: OMO-SIR836DP-T1-GE3-VISHAY |
MOSFET N-CH 40V 21A PPAK SO-8 |
|
|
Mfr.#: SIR836DPT1GE3 OMO.#: OMO-SIR836DPT1GE3-1190 |
Power Field-Effect Transistor, 21A I(D), 40V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |