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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSP297L6327HTSA1 DISTI # BSP297L6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BSP297H6327XTSA1 OMO.#: OMO-BSP297H6327XTSA1 |
MOSFET N-Ch 200V 660mA SOT-223-3 |
|
|
Mfr.#: BSP297 H6327 OMO.#: OMO-BSP297-H6327 |
MOSFET N-Ch 200V 660mA SOT-223-3 |
|
Mfr.#: BSP297H6327 OMO.#: OMO-BSP297H6327-1190 |
200V,0.66A,N-Ch Small-Signal MOSFET |
|
|
Mfr.#: BSP297 , TEA1791T/N1 , B |
Жаңа және түпнұсқа |
|
Mfr.#: BSP297 E6327 |
MOSFET N-CH 200V 660MA SOT-223 |
|
|
Mfr.#: BSP297E6327 OMO.#: OMO-BSP297E6327-1190 |
0.66 A, 200 V, 1.8 OHM, N-CHANNEL, SI, POWER, MOSFET |
|
|
Mfr.#: BSP297H6327XTSA1/SN OMO.#: OMO-BSP297H6327XTSA1-SN-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSP297L6327 OMO.#: OMO-BSP297L6327-1190 |
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP297L6327HTSA1 |
MOSFET N-CH 200V 660MA SOT-223 |
|
|
Mfr.#: BSP297L6327XT OMO.#: OMO-BSP297L6327XT-1190 |
Жаңа және түпнұсқа |