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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSP297L6327HTSA1 DISTI # BSP297L6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP297L6327HTSA1 DISTI # BSP297L6327HTSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP297L6327HTSA1 DISTI # BSP297L6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP297L6327HTSA1 DISTI # BSP297L6327HTSA1 | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 - Bulk (Alt: BSP297L6327HTSA1) Min Qty: 1137 Container: Bulk | Americas - 0 | |
| BSP297 L6327 DISTI # 726-BSP297L6327 | Infineon Technologies AG | MOSFET N-Ch 200V 660mA SOT-223-3 RoHS: Compliant | 0 | |
| BSP297L6327 | Infineon Technologies AG | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 60127 |
|
| BSP297L6327HTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 274290 |
|
| BSP297L6327 | Infineon Technologies AG | 141 | ||
| BSP297 L6327 | Infineon Technologies AG | 1199 | ||
| BSP297L6327 | Infineon Technologies AG | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 1800 | |
| BSP297L6327 | Infineon Technologies AG | 432 | ||
| BSP297L6327 DISTI # 1562500 | Infineon Technologies AG | RoHS: Compliant | 0 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BSP296N H6433 OMO.#: OMO-BSP296N-H6433 |
MOSFET SMALL SIGNAL N-CH |
|
Mfr.#: BSP299L3627 OMO.#: OMO-BSP299L3627-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSP296E6327-01 OMO.#: OMO-BSP296E6327-01-1190 |
INSTOCK |
|
|
Mfr.#: BSP295 E6327 OMO.#: OMO-BSP295-E6327-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: BSP295E6327 |
MOSFET N-CH 60V 1.8A SOT223 |
|
|
Mfr.#: BSP296N 6327 OMO.#: OMO-BSP296N-6327-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSP297E6327 OMO.#: OMO-BSP297E6327-1190 |
0.66 A, 200 V, 1.8 OHM, N-CHANNEL, SI, POWER, MOSFET |
|
|
Mfr.#: BSP298 OMO.#: OMO-BSP298-1190 |
MOSFET, N CHANNEL, 400V, 500mA, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:500mA, Drain Source Voltage Vds:400V, On Resistance Rds(on):2.2ohm, Rds(on) Test Voltage Vgs:10 |
|
|
Mfr.#: BSP298H6327 OMO.#: OMO-BSP298H6327-1190 |
400V,0.5A,N-channel Power Transisto |
|
|
Mfr.#: BSP299L6327XT OMO.#: OMO-BSP299L6327XT-1190 |
Жаңа және түпнұсқа |
