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SIDR668DP-T1-GE3

SIDR668DP-T1-GE3
Mfr. #:
SIDR668DP-T1-GE3
Өндіруші:
Vishay
Сипаттама:
MOSFET N-CH 100V
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SIDR668DP-T1-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
SIDR668DP-T1-GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Tags
SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Бөлім № Mfg. Сипаттама Қор Бағасы
SIDR668DP-T1-GE3
DISTI # 29499188		Vishay IntertechnologiesN-Channel 100 V (D-S) MOSFET3000
  • 3000:$1.4091
SIDR668DP-T1-GE3
DISTI # SIDR668DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5839In Stock
  • 1000:$1.4819
  • 500:$1.7885
  • 100:$2.1769
  • 10:$2.7080
  • 1:$3.0100
SIDR668DP-T1-GE3
DISTI # SIDR668DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5839In Stock
  • 1000:$1.4819
  • 500:$1.7885
  • 100:$2.1769
  • 10:$2.7080
  • 1:$3.0100
SIDR668DP-T1-GE3
DISTI # SIDR668DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 6000:$1.3230
  • 3000:$1.3395
SIDR668DP-T1-GE3
DISTI # 59AC7340		Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET0
  • 10000:$1.1900
  • 6000:$1.2300
  • 4000:$1.2800
  • 2000:$1.4200
  • 1000:$1.5000
  • 1:$1.5900
SIDR668DP-T1-GE3
DISTI # 78AC6505		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.4V,Power RoHS Compliant: Yes0
  • 500:$1.6700
  • 250:$1.7900
  • 100:$1.9100
  • 50:$2.0900
  • 25:$2.2700
  • 10:$2.4500
  • 1:$2.9600
SIDR668DP-T1-GE3
DISTI # 78-SIDR668DP-T1-GE3		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
RoHS: Compliant		9739
  • 1:$2.9300
  • 10:$2.4300
  • 100:$1.8900
  • 500:$1.6500
  • 1000:$1.3700
  • 3000:$1.2700
  • 6000:$1.2200
SIDR668DP-T1-GE3
DISTI # 2932900		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, 150DEG C, 125W6000
  • 500:£1.2100
  • 250:£1.3000
  • 100:£1.3800
  • 10:£1.7800
  • 1:£2.4200
SIDR668DP-T1-GE3
DISTI # 2932900		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, 150DEG C, 125W
RoHS: Compliant		6000
  • 1000:$2.5300
  • 500:$2.6800
  • 250:$2.8400
  • 100:$3.1000
  • 10:$3.5700
  • 1:$4.1000
Сурет Бөлім № Сипаттама
SIDR668DP-T1-GE3

Mfr.#: SIDR668DP-T1-GE3

OMO.#: OMO-SIDR668DP-T1-GE3

 MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
SIDR668DP-T1-GE3

Mfr.#: SIDR668DP-T1-GE3

OMO.#: OMO-SIDR668DP-T1-GE3-VISHAY

 MOSFET N-CH 100V
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
5000
Саны енгізіңіз:
SIDR668DP-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,78 $
1,78 $
10
1,70 $
16,96 $
100
1,61 $
160,65 $
500
1,52 $
758,65 $
1000
1,43 $
1 428,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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