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PGA26E19BA

PGA26E19BA
Mfr. #:
PGA26E19BA
Өндіруші:
Panasonic
Сипаттама:
MOSFET MOSFET 600VDC 190mohm X-GaN
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
PGA26E19BA Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
PGA26E19BA Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Panasonic
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
GaN
Орнату стилі:
SMD/SMT
Пакет/қорап:
DFN-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
600 V
Идентификатор - үздіксіз төгу тогы:
13 A
Rds On - ағызу көзіне қарсылық:
190 mOhms
Vgs th - Gate-Source шекті кернеуі:
1.2 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
2 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
69 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
X-GaN
Серия:
PGA26E19BA
Бренд:
Panasonic
Күз уақыты:
2.4 ns
Ылғалға сезімтал:
Иә
Өнім түрі:
MOSFET
Көтеру уақыты:
5.2 ns
Зауыттық буманың саны:
2000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
3.4 ns
Қосудың әдеттегі кешігу уақыты:
3.4 ns
Tags
PGA26E1, PGA26, PGA2, PGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Power Field-Effect Transistor,
***asonic SCT
GaN Power Devices, 600V, DFN 8x8, RoHS
PGA26E X-GaN Power Transistors
Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.
X-GaN Power Solutions
Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.
Бөлім № Mfg. Сипаттама Қор Бағасы
PGA26E19BA
DISTI # 667-PGA26E19BA		Panasonic Electronic ComponentsMOSFET MOSFET 600VDC 190mohm X-GaN
RoHS: Compliant		0
  • 1:$18.2900
  • 10:$17.0700
  • 25:$16.2100
PGA26E19BA-SWEVB008
DISTI # 667-PGA26E19BASWEV8		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 190mOhm X-GaN 1/2 Bridge EVB
RoHS: Compliant		19
  • 1:$400.0000
PGA26E19BA-SWEVB006
DISTI # 667-PGA26E19BASWEVB6		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 190mOhm X-GaN Chopper EVB
RoHS: Compliant		3
  • 1:$300.0000
PGA26E19BA-DB001
DISTI # 667-PGA26E19BADB001		Panasonic Electronic ComponentsPower Management IC Development Tools SMD-ThruHole ConvKit 600VDC 190mohm X-GaN
RoHS: Compliant		0
  • 1:$45.0000
Сурет Бөлім № Сипаттама
SN6505BDBVR

Mfr.#: SN6505BDBVR

OMO.#: OMO-SN6505BDBVR

 Power Management Specialized - PMIC Transformer driver for isolated power
GS-065-008-1-L

Mfr.#: GS-065-008-1-L

OMO.#: OMO-GS-065-008-1-L

 MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
GS61004B-E01-MR

Mfr.#: GS61004B-E01-MR

OMO.#: OMO-GS61004B-E01-MR

 MOSFET 100V 45A E-Mode GaN
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR

 MOSFET 650V Enhancement Mode Transistor
GS66504B-E01-MR

Mfr.#: GS66504B-E01-MR

OMO.#: OMO-GS66504B-E01-MR

 MOSFET 650V 15A E-Mode GaN
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

 MOSFET 650V 30A E-Mode GaN
C2M0160120D

Mfr.#: C2M0160120D

OMO.#: OMO-C2M0160120D

 MOSFET SIC MOSFET 1200V RDS ON 160 mOhm
STPSC10H065GY-TR

Mfr.#: STPSC10H065GY-TR

OMO.#: OMO-STPSC10H065GY-TR

 Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
LMG1020YFFR

Mfr.#: LMG1020YFFR

OMO.#: OMO-LMG1020YFFR

 Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
C2M0160120D

Mfr.#: C2M0160120D

OMO.#: OMO-C2M0160120D-WOLFSPEED

 MOSFET N-CH 1200V 19A TO-247
Қол жетімділік
Қор:
309
Тапсырыс бойынша:
2292
Саны енгізіңіз:
PGA26E19BA ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
18,29 $
18,29 $
10
17,07 $
170,70 $
25
16,21 $
405,25 $
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