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BSC072N03LD G

BSC072N03LD G
Mfr. #:
BSC072N03LD G
Өндіруші:
Infineon Technologies
Сипаттама:
Trans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSC072N03LD G Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші
Infineon Technologies
Өнім санаты
FETs - массивтер
Сериялар
OptiMOS
Қаптама
Digi-ReelR балама орамасы
Бөлік бүркеншік аттар
BSC072N03LDGATMA1 BSC072N03LDGXT SP000359607
Монтаждау стилі
SMD/SMT
Сауда атауы
OptiMOS
Пакет-қорап
8-PowerVDFN
Технология
Си
Жұмыс температурасы
-55°C ~ 150°C (TJ)
Монтаждау түрі
Беттік орнату
Арналар саны
1 Channel
Жабдықтаушы-құрылғы-пакет
PG-TDSON-8 (5.15x6.15)
Конфигурация
Қос қос ағызу
FET түрі
2 N-Channel (Dual)
Қуат – Макс
57W
Транзистор түрі
1 N-Channel
Ағызу-көзге-кернеу-Vdss
30V
Кіріс-сыйымдылық-Ciss-Vds
3500pF @ 15V
FET мүмкіндігі
Логикалық деңгей қақпасы
Ағымдағы-Үздіксіз-ағызу-Id-25°C
11.5A
Rds-On-Max-Id-Vgs
7.2 mOhm @ 20A, 10V
Vgs-th-Max-Id
2.2V @ 250μA
Gate-Charge-Qg-Vgs
41nC @ 10V
Pd-қуат-диссипация
1.5 W
Максималды-жұмыс температурасы
+ 150 C
Ең төменгі жұмыс температурасы
- 55 C
Күз уақыты
4 ns
Көтерілу уақыты
4 ns
Vgs-қақпа-көзі-кернеу
20 V
Id-үздіксіз-ағызу-ток
20 A
Vds-ағызу-көз-бұзу-кернеу
30 V
Rds-On-Drain-Source-Resistance
7.2 mOhms
Транзистор-полярлық
N-арна
Әдеттегі-өшіру-кідірту уақыты
25 ns
Әдеттегі-қосу-кешігу-уақыты
6 ns
Арна режимі
Жақсарту
Tags
BSC072N03LDG, BSC072N03, BSC072N0, BSC072, BSC07, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 7.2 mOhm 31 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 20A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:57W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:57W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Бөлім № Mfg. Сипаттама Қор Бағасы
BSC072N03LDGATMA1
DISTI # V72:2272_06384111		Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R
RoHS: Compliant		4963
  • 3000:$0.5192
  • 1000:$0.5245
  • 500:$0.6420
  • 250:$0.7143
  • 100:$0.7223
  • 25:$0.8941
  • 10:$0.9049
  • 1:$1.0250
BSC072N03LDGATMA1
DISTI # BSC072N03LDGATMA1CT-ND		Infineon Technologies AGMOSFET 2N-CH 30V 11.5A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		437In Stock
  • 1000:$0.6762
  • 500:$0.8566
  • 100:$1.1045
  • 10:$1.3980
  • 1:$1.5800
BSC072N03LDGATMA1
DISTI # BSC072N03LDGATMA1DKR-ND		Infineon Technologies AGMOSFET 2N-CH 30V 11.5A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		437In Stock
  • 1000:$0.6762
  • 500:$0.8566
  • 100:$1.1045
  • 10:$1.3980
  • 1:$1.5800
BSC072N03LDGATMA1
DISTI # BSC072N03LDGATMA1TR-ND		Infineon Technologies AGMOSFET 2N-CH 30V 11.5A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.5821
BSC072N03LD G
DISTI # 30579211		Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP
RoHS: Compliant		5018
  • 100:$0.7803
  • 50:$0.8810
  • 10:$1.2623
  • 9:$3.0345
BSC072N03LDGATMA1
DISTI # 31312147		Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 10000:$0.4896
  • 5000:$0.5088
BSC072N03LDGATMA1
DISTI # 30737654		Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R
RoHS: Compliant		4963
  • 3000:$0.5183
  • 1000:$0.5237
  • 500:$0.6408
  • 250:$0.7129
  • 100:$0.7209
  • 25:$0.8919
  • 15:$0.9027
BSC072N03LD G
DISTI # BSC072N03LD G		Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON T/R (Alt: BSC072N03LD G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC072N03LDGATMA1
    DISTI # BSC072N03LDGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC072N03LDGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.5189
    • 10000:$0.5169
    • 20000:$0.5159
    • 30000:$0.5149
    • 50000:$0.5139
    BSC072N03LDGATMA1.
    DISTI # 31AC8218    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:57W,No. of Pins:8Pins0
    • 1:$0.5080
    • 10000:$0.5060
    • 20000:$0.5050
    • 30000:$0.5040
    • 50000:$0.5020
    BSC072N03LD G
    DISTI # 726-BSC072N03LDG    		Infineon Technologies AGMOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
    RoHS: Compliant    		857
    • 1:$1.3100
    • 10:$1.1200
    • 100:$0.8560
    • 500:$0.7570
    • 1000:$0.5970
    • 5000:$0.5300
    BSC072N03LDGATMA1
    DISTI # 726-BSC072N03LDGATMA    		Infineon Technologies AGMOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
    RoHS: Compliant    		5179
    • 1:$1.3100
    • 10:$1.1200
    • 100:$0.8560
    • 500:$0.7570
    • 1000:$0.5970
    • 5000:$0.5300
    BSC072N03LDGATMA1
    DISTI # 8259216P    		Infineon Technologies AGMOSFET N-CH 11.5A 30V OPTIMOS3 TDSON8EP, RL3240
    • 100:£0.3580
    BSC072N03LDGATMA1
    DISTI # BSC072N03LDGATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,11.5A,57W,PG-TDSON-83231
    • 1:$0.6749
    • 5:$0.5854
    • 25:$0.5452
    • 100:$0.4844
    BSC072N03LDGInfineon Technologies AG 1440
      BSC072N03LDGInfineon Technologies AG30V,20A,Dual N-channel power MOSFET,logic level1400
      • 1:$0.9200
      • 100:$0.7700
      • 500:$0.6800
      • 1000:$0.6600
      BSC072N03LDGATMA1
      DISTI # 1775452      		Infineon Technologies AGMOSFET, N CH, 20A, 30V, PG-TDSON-8
      RoHS: Compliant      		4910
      • 5:£0.9880
      • 25:£0.8940
      • 100:£0.6840
      • 250:£0.6440
      • 500:£0.6040
      BSC072N03LD G
      DISTI # C1S322000086425      		Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R
      RoHS: Compliant      		5018
      • 100:$0.6120
      • 50:$0.6910
      • 10:$0.9900
      • 1:$2.3800
      BSC072N03LDGATMA1
      DISTI # C1S322000666355      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		4963
      • 250:$0.7129
      • 100:$0.7209
      • 25:$0.8919
      • 10:$0.9027
      BSC072N03LDGATMA1
      DISTI # C1S322000401509      		Infineon Technologies AGTrans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R
      RoHS: Compliant      		5000
      • 5000:$0.5180
      Сурет Бөлім № Сипаттама
      BSC072N08NS5ATMA1

      Mfr.#: BSC072N08NS5ATMA1

      OMO.#: OMO-BSC072N08NS5ATMA1

      		 MOSFET N-Ch 80V 74A TDSON-8
      BSC072N03LDGATMA1

      Mfr.#: BSC072N03LDGATMA1

      OMO.#: OMO-BSC072N03LDGATMA1

      		 MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
      BSC072N03LD G

      Mfr.#: BSC072N03LD G

      OMO.#: OMO-BSC072N03LD-G

      		 MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
      BSC072N03LD

      Mfr.#: BSC072N03LD

      OMO.#: OMO-BSC072N03LD-1190

      		 Жаңа және түпнұсқа
      BSC072N03LD G

      Mfr.#: BSC072N03LD G

      OMO.#: OMO-BSC072N03LD-G-1190

      		 Trans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP
      BSC072N03LDG

      Mfr.#: BSC072N03LDG

      OMO.#: OMO-BSC072N03LDG-1190

      		 30V,20A,Dual N-channel power MOSFET,logic level
      BSC072N3S

      Mfr.#: BSC072N3S

      OMO.#: OMO-BSC072N3S-1190

      		 Жаңа және түпнұсқа
      BSC072N03LDGATMA1

      Mfr.#: BSC072N03LDGATMA1

      OMO.#: OMO-BSC072N03LDGATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET 2N-CH 30V 11.5A 8TDSON
      BSC072N03LDGATMA1-CUT TAPE

      Mfr.#: BSC072N03LDGATMA1-CUT TAPE

      OMO.#: OMO-BSC072N03LDGATMA1-CUT-TAPE-1190

      		 Жаңа және түпнұсқа
      BSC072N08NS5ATMA1

      Mfr.#: BSC072N08NS5ATMA1

      OMO.#: OMO-BSC072N08NS5ATMA1-INFINEON-TECHNOLOGIES

      		 RF Bipolar Transistors MOSFET N-Ch 80V 74A TDSON-8
      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      5000
      Саны енгізіңіз:
      BSC072N03LD G ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      0,80 $
      0,80 $
      10
      0,76 $
      7,55 $
      100
      0,72 $
      71,55 $
      500
      0,68 $
      337,90 $
      1000
      0,64 $
      636,00 $
      -ден бастаңыз
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