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RQ3E100MNTB1

RQ3E100MNTB1
Mfr. #:
RQ3E100MNTB1
Өндіруші:
Rohm Semiconductor
Сипаттама:
MOSFET
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
RQ3E100MNTB1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ROHM жартылай өткізгіш
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
HSMT-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
10 A
Rds On - ағызу көзіне қарсылық:
8.8 mOhms
Vgs th - Gate-Source шекті кернеуі:
2.5 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
9.9 nC
Pd - қуаттың шығыны:
2 W
Конфигурация:
Бойдақ
Қаптама:
Ролик
Транзистор түрі:
1 N-Channel
Бренд:
ROHM жартылай өткізгіш
Күз уақыты:
6 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
17 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
31 ns
Қосудың әдеттегі кешігу уақыты:
7 ns
Tags
RQ3E100M, RQ3E10, RQ3E1, RQ3E, RQ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hard Electronics
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***ineon SCT
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***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***nell
MOSFET,P CH,30V,12A,SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power D
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*** Source Electronics
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC
***ark
N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***Yang
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ
***ure Electronics
N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8
***et Europe
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS6680A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
*** Source Electronics
MOSFET P-CH 30V 19.7A 8-SOIC / Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R
***ure Electronics
SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8
***ment14 APAC
MOSFET, P-CH, 30V, 19.7A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-19.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):8.1mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-19.7A; Power Dissipation Pd:5.7W; Voltage Vgs Max:20V
***eco
Transistor MOSFET Negative Channel 30 Volt 13A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.011Ohm;ID 13A;SO-8;PD 2.5W;VGS +/-20V;VF 1
***ure Electronics
Single N-Channel 30 V 0.011 Ohm 52 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***ical
Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***el Electronic
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-SOIC (0.154, 3.90mm Width) Surface Mount MOSFET (Metal Oxide) N-Channel Tube 11m Ω @ 7.3A, 10V 13A Ta -55°C~150°C TJ MOSFET N-CH 30V 13A 8-SOIC
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipat
***emi
N-Channel Fast Switching PowerTrench® MOSFET, 30V, 13A, 11.3mΩ
***et Europe
Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:13A; Package / Case:SOIC-8; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Бөлім № Mfg. Сипаттама Қор Бағасы
RQ3E100MNTB1
DISTI # RQ3E100MNTB1TR-ND		ROHM SemiconductorMOSFET N-CH 30V 10A HSMT8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.4200
RQ3E100MNTB1
DISTI # RQ3E100MNTB1CT-ND		ROHM SemiconductorMOSFET N-CH 30V 10A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2428In Stock
  • 1000:$0.4635
  • 500:$0.5871
  • 100:$0.7571
  • 10:$0.9580
  • 1:$1.0800
RQ3E100MNTB1
DISTI # RQ3E100MNTB1DKR-ND		ROHM SemiconductorMOSFET N-CH 30V 10A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    RQ3E100MNTB1
    DISTI # RQ3E100MNTB1    		ROHM SemiconductorRQ3E100MNTB1 - Tape and Reel (Alt: RQ3E100MNTB1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.2819
    • 18000:$0.2899
    • 12000:$0.3069
    • 6000:$0.3259
    • 3000:$0.3479
    RQ3E100MNTB1
    DISTI # 755-RQ3E100MNTB1    		ROHM SemiconductorMOSFET
    RoHS: Compliant    		0
      RQ3E100MNTB1ROHM Semiconductor 3000
      • 1:¥23.4681
      • 100:¥12.2738
      • 1000:¥6.7015
      • 1500:¥4.5436
      • 3000:¥3.3850
      Сурет Бөлім № Сипаттама
      RQ3E100ATTB

      Mfr.#: RQ3E100ATTB

      OMO.#: OMO-RQ3E100ATTB

      		 MOSFET PCH -30V -31A POWER
      RQ3E100MNTB1

      Mfr.#: RQ3E100MNTB1

      OMO.#: OMO-RQ3E100MNTB1

      		 MOSFET
      RQ3E100BN

      Mfr.#: RQ3E100BN

      OMO.#: OMO-RQ3E100BN-1190

      		 Жаңа және түпнұсқа
      RQ3E100BNFU7TB

      Mfr.#: RQ3E100BNFU7TB

      OMO.#: OMO-RQ3E100BNFU7TB-1190

      		 Жаңа және түпнұсқа
      RQ3E100BNTB1

      Mfr.#: RQ3E100BNTB1

      OMO.#: OMO-RQ3E100BNTB1-1190

      		 Жаңа және түпнұсқа
      RQ3E100MN

      Mfr.#: RQ3E100MN

      OMO.#: OMO-RQ3E100MN-1190

      		 Жаңа және түпнұсқа
      RQ3E100MNFU

      Mfr.#: RQ3E100MNFU

      OMO.#: OMO-RQ3E100MNFU-1190

      		 Жаңа және түпнұсқа
      RQ3E100MNFU7TB1

      Mfr.#: RQ3E100MNFU7TB1

      OMO.#: OMO-RQ3E100MNFU7TB1-1190

      		 Жаңа және түпнұсқа
      RQ3E100MNTB

      Mfr.#: RQ3E100MNTB

      OMO.#: OMO-RQ3E100MNTB-1190

      		 Жаңа және түпнұсқа
      RQ3E100MNTB1

      Mfr.#: RQ3E100MNTB1

      OMO.#: OMO-RQ3E100MNTB1-ROHM-SEMI

      		 MOSFET N-CH 30V 10A HSMT8
      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      5500
      Саны енгізіңіз:
      RQ3E100MNTB1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      0,99 $
      0,99 $
      10
      0,84 $
      8,40 $
      100
      0,65 $
      64,60 $
      500
      0,57 $
      285,50 $
      1000
      0,45 $
      450,00 $
      -ден бастаңыз
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