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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SI1012X-T1-GE3 DISTI # V72:2272_09215334 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R RoHS: Compliant | 994 |
|
| SI1012X-T1-GE3 DISTI # V36:1790_09215334 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R RoHS: Compliant | 0 |
|
| SI1012X-T1-GE3 DISTI # SI1012X-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 20V 500MA SC89-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 51552In Stock |
|
| SI1012X-T1-GE3 DISTI # SI1012X-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 20V 500MA SC89-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 51552In Stock |
|
| SI1012X-T1-GE3 DISTI # SI1012X-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 20V 500MA SC89-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 48000In Stock |
|
| SI1012X-T1-GE3 DISTI # 25789785 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R RoHS: Compliant | 994 |
|
| SI1012X-T1-GE3 DISTI # SI1012X-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R (Alt: SI1012X-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SI1012X-T1-GE3 DISTI # SI1012X-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R (Alt: SI1012X-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 | |
| SI1012X-T1-GE3 DISTI # SI1012X-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R - Tape and Reel (Alt: SI1012X-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI1012X-T1-GE3. DISTI # 26AC3307 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:500mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:900mV,Power Dissipation Pd:250mW,No. of Pins:3Pins RoHS Compliant: No | 0 |
|
| SI1012X-T1-GE3 DISTI # 16P3669 | Vishay Intertechnologies | N CHANNEL MOSFET, 20V, 500mA, SC-89,Transistor Polarity:N Channel,Continuous Drain Current Id:600mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.7ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:900mV RoHS Compliant: Yes | 0 |
|
| SI1012X-T1-GE3 DISTI # 70026402 | Vishay Siliconix | MOSFET,Power,N-Ch,VDSS 20V,RDS(ON) 0.41Ohm,ID 500mA,SC-89 (SOT-490),Halogeenfree RoHS: Compliant | 0 |
|
| SI1012X-T1-GE3 DISTI # 781-SI1012X-T1-GE3 | Vishay Intertechnologies | MOSFET 20V 0.6A 175mW 700mohm @ 4.5V RoHS: Compliant | 3158 |
|
| SI1012XT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| SI1012X-T1-GE3 | Vishay Intertechnologies | MOSFET 20V 0.6A 175mW 700mohm @ 4.5V RoHS: Compliant | Americas - 6000 | |
| SI1012X-T1-GE3 DISTI # 1690182 | Vishay Intertechnologies | N CHANNEL MOSFET, 20V, 500mA, SC-89 RoHS: Compliant | 0 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SI1012R-T1-GE3 OMO.#: OMO-SI1012R-T1-GE3 |
MOSFET 20V 0.6A 175mW 700mohm @ 4.5V |
|
|
Mfr.#: SI1012CR-T1-GE3 OMO.#: OMO-SI1012CR-T1-GE3 |
MOSFET 20V Vds 8V Vgs SC75A |
|
Mfr.#: SI1012-A-GM OMO.#: OMO-SI1012-A-GM-SILICON-LABS |
IC RF TXRX+MCU ISM<1GHZ 42WFQFN |
|
Mfr.#: SI1012-TP |
N-CHANNEL MOSFET, SOT-523 PACKAG |
|
Mfr.#: SI1012CR-T1-GE3 OMO.#: OMO-SI1012CR-T1-GE3-VISHAY |
MOSFET N-CH 20V 0.63A SC-75A |
|
Mfr.#: SI1012R-S6-GE3 OMO.#: OMO-SI1012R-S6-GE3-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SI1012R-T1-E3 , MAX6840XSD0 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SI1012R-T1-E3 SI1012R-T1 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SI1012R-T1-GE3-CUT TAPE |
Жаңа және түпнұсқа |
|
Mfr.#: SI1012-C-GM2 |
Microcontrollers - MCU RF Microcontrollers - MCU 16kB, 768B RAM +13 dBm |