FDFMA3N109

FDFMA3N109
Mfr. #:
FDFMA3N109
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
MOSFET PowerTrench MOSFET and Schottky Diode
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
FDFMA3N109 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
MicroFET-6
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
2.9 A
Rds On - ағызу көзіне қарсылық:
123 mOhms
Vgs - Шлюз көзі кернеуі:
12 V
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
1.5 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
PowerTrench
Қаптама:
Ролик
Биіктігі:
0.75 mm
Ұзындығы:
2 mm
Өнім:
MOSFET шағын сигналы
Серия:
FDFMA3N109
Транзистор түрі:
1 N-Channel
Ені:
2 mm
Бренд:
ON Semiconductor / Fairchild
Күз уақыты:
8 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
8 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
12 ns
Қосудың әдеттегі кешігу уақыты:
6 ns
Бірлік салмағы:
0.002116 oz
Tags
FDFMA3, FDFMA, FDFM, FDF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ
***ment14 APAC
MOSFET, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):123mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Pulse Current Idm:10A; SMD Marking:109; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Бөлім № Mfg. Сипаттама Қор Бағасы
FDFMA3N109
DISTI # V72:2272_06337763
ON Semiconductor30V,2.9A ,INTEGRATED, NCH POWE1923
  • 1000:$0.2692
  • 500:$0.2990
  • 250:$0.3323
  • 100:$0.3693
  • 25:$0.5657
  • 10:$0.5666
  • 1:$0.6695
FDFMA3N109
DISTI # FDFMA3N109FSCT-ND
ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
21130In Stock
  • 1000:$0.3586
  • 500:$0.4482
  • 100:$0.6051
  • 10:$0.7840
  • 1:$0.9000
FDFMA3N109
DISTI # FDFMA3N109FSDKR-ND
ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
21130In Stock
  • 1000:$0.3586
  • 500:$0.4482
  • 100:$0.6051
  • 10:$0.7840
  • 1:$0.9000
FDFMA3N109
DISTI # FDFMA3N109FSTR-ND
ON SemiconductorMOSFET N-CH 30V 2.9A MICRO2X2
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
21000In Stock
  • 3000:$0.3155
FDFMA3N109
DISTI # 25745010
ON Semiconductor30V,2.9A ,INTEGRATED, NCH POWE1923
  • 1000:$0.2692
  • 500:$0.2990
  • 250:$0.3323
  • 100:$0.3693
  • 29:$0.5657
FDFMA3N109
DISTI # FDFMA3N109
ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R (Alt: FDFMA3N109)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.3319
  • 6000:€0.2719
  • 12000:€0.2489
  • 18000:€0.2299
  • 30000:€0.2129
FDFMA3N109
DISTI # FDFMA3N109
ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDFMA3N109)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.2359
  • 6000:$0.2339
  • 12000:$0.2309
  • 18000:$0.2279
  • 30000:$0.2219
FDFMA3N109
DISTI # 04M9094
ON SemiconductorTRANSISTOR ARRAY, FULL REEL,Transistor Polarity:N Channel + Schottky,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
  • 1:$0.2670
  • 9000:$0.2580
  • 24000:$0.2480
FDFMA3N109Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
75450
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
FDFMA3N109
DISTI # 512-FDFMA3N109
ON SemiconductorMOSFET PowerTrench MOSFET and Schottky Diode
RoHS: Compliant
5668
  • 1:$0.7400
  • 10:$0.6140
  • 100:$0.3960
  • 1000:$0.3170
  • 3000:$0.2680
  • 9000:$0.2580
  • 24000:$0.2480
FDFMA3N109
DISTI # 1324787RL
ON SemiconductorMOSFET, N, MLP6
RoHS: Compliant
0
  • 1:$1.1800
  • 10:$0.9720
  • 100:$0.6270
  • 1000:$0.5020
  • 3000:$0.4250
  • 9000:$0.4090
  • 24000:$0.3930
  • 45000:$0.3870
FDFMA3N109
DISTI # 1324787
ON SemiconductorMOSFET, N, MLP6
RoHS: Compliant
0
  • 1:$1.1800
  • 10:$0.9720
  • 100:$0.6270
  • 1000:$0.5020
  • 3000:$0.4250
  • 9000:$0.4090
  • 24000:$0.3930
  • 45000:$0.3870
FDFMA3N109
DISTI # C1S541901518927
ON SemiconductorTrans MOSFET N-CH 30V 2.9A 6-Pin MLP EP T/R
RoHS: Compliant
1923
  • 250:$0.3323
  • 100:$0.3693
  • 25:$0.5657
  • 10:$0.5666
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Transistor Output Optocouplers X36 PBF Trans Opto couplr 110C3750Vrms
SI2308CDS-T1-GE3

Mfr.#: SI2308CDS-T1-GE3

OMO.#: OMO-SI2308CDS-T1-GE3-VISHAY

MOSFET N-CH 60V 2.6A SOT23-3
TLP183(YH-TPL,E

Mfr.#: TLP183(YH-TPL,E

OMO.#: OMO-TLP183-YH-TPL-E-TOSHIBA-SEMICONDUCTOR-AND-STOR

Transistor Output Optocouplers X36 PBF Trans Opto couplr 110C3750Vrms
IGOT60R070D1AUMA1

Mfr.#: IGOT60R070D1AUMA1

OMO.#: OMO-IGOT60R070D1AUMA1-INFINEON-TECHNOLOGIES

IC GAN FET 600V 60A 20DSO
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1988
Саны енгізіңіз:
FDFMA3N109 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,74 $
0,74 $
10
0,61 $
6,14 $
100
0,40 $
39,60 $
1000
0,32 $
317,00 $
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