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IPD60R180P7ATMA1

IPD60R180P7ATMA1
Mfr. #:
IPD60R180P7ATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPD60R180P7ATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPD60R180P7ATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-252-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
600 V
Идентификатор - үздіксіз төгу тогы:
18 A
Rds On - ағызу көзіне қарсылық:
145 mOhms
Vgs th - Gate-Source шекті кернеуі:
3 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
25 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
72 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
CoolMOS
Қаптама:
Ролик
Серия:
CoolMOS P7
Транзистор түрі:
1 N-Channel
Бренд:
Infineon Technologies
Күз уақыты:
8 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
12 ns
Зауыттық буманың саны:
2500
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
85 ns
Қосудың әдеттегі кешігу уақыты:
14 ns
Бөлім # Бүркеншік аттар:
IPD60R180P7 SP001606052
Бірлік салмағы:
0.011993 oz
Tags
IPD60R180P, IPD60R18, IPD60R1, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET N-CH 600V 18A 3-Pin TO-252 T/R - Tape and Reel
***ure Electronics
Single N-Channel 600 V 180 mOhm 25 nC CoolMOS™ Power Mosfet - DPAK
*** Stop Electro
Power Field-Effect Transistor, 18A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 600V, 18A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.145ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 72W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Бөлім № Mfg. Сипаттама Қор Бағасы
IPD60R180P7ATMA1
DISTI # V72:2272_17072160		Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(2+Tab) DPAK T/R2320
  • 1000:$1.3221
  • 500:$1.3362
  • 250:$1.5157
  • 100:$1.5626
  • 25:$1.9144
  • 10:$1.9872
  • 1:$2.6000
IPD60R180P7ATMA1
DISTI # V36:1790_17072160		Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(2+Tab) DPAK T/R0
    IPD60R180P7ATMA1
    DISTI # IPD60R180P7ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 650V 18A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 5000:$1.1295
    • 2500:$1.1436
    IPD60R180P7ATMA1
    DISTI # IPD60R180P7ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 18A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.2652
    • 500:$1.5270
    • 100:$1.8585
    • 10:$2.3120
    • 1:$2.5700
    IPD60R180P7ATMA1
    DISTI # IPD60R180P7ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 18A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.2652
    • 500:$1.5270
    • 100:$1.8585
    • 10:$2.3120
    • 1:$2.5700
    IPD60R180P7ATMA1
    DISTI # 32334069    		Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(2+Tab) DPAK T/R2500
    • 2500:$1.0791
    IPD60R180P7ATMA1
    DISTI # 33635180    		Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(2+Tab) DPAK T/R2320
    • 1000:$1.3221
    • 500:$1.3362
    • 250:$1.5137
    • 100:$1.5626
    • 25:$1.9133
    • 10:$1.9876
    • 6:$2.6000
    IPD60R180P7ATMA1
    DISTI # IPD60R180P7ATMA1    		Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPD60R180P7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$1.0249
    • 15000:$1.0429
    • 10000:$1.0799
    • 5000:$1.1199
    • 2500:$1.1619
    IPD60R180P7ATMA1
    DISTI # 43AC3271    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.145ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes0
    • 1000:$1.1800
    • 500:$1.4200
    • 250:$1.5300
    • 100:$1.6300
    • 50:$1.7600
    • 25:$1.9000
    • 10:$2.0300
    • 1:$2.3900
    IPD60R180P7ATMA1
    DISTI # 726-IPD60R180P7ATMA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		9859
    • 1:$2.3700
    • 10:$2.0100
    • 100:$1.6100
    • 500:$1.4100
    • 1000:$1.1700
    • 2500:$1.0900
    • 5000:$1.0400
    IPD60R180P7ATMA1
    DISTI # 2803395    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-252-3
    RoHS: Compliant    		0
    • 1000:$1.6200
    • 500:$1.6500
    • 250:$1.7400
    • 100:$1.8400
    • 10:$2.0800
    • 1:$2.2300
    IPD60R180P7ATMA1
    DISTI # 2803395    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-252-3188
    • 100:£1.5800
    • 10:£1.9700
    • 1:£2.6300
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    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1992
    Саны енгізіңіз:
    IPD60R180P7ATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    2,37 $
    2,37 $
    10
    2,01 $
    20,10 $
    100
    1,61 $
    161,00 $
    500
    1,41 $
    705,00 $
    1000
    1,17 $
    1 170,00 $
    -ден бастаңыз
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