IPB60R060P7ATMA1

IPB60R060P7ATMA1
Mfr. #:
IPB60R060P7ATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET HIGH POWER_NEW
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB60R060P7ATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPB60R060P7ATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TO-263-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
600 V
Идентификатор - үздіксіз төгу тогы:
48 A
Rds On - ағызу көзіне қарсылық:
49 mOhms
Vgs th - Gate-Source шекті кернеуі:
3 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
67 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
164 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Ролик
Транзистор түрі:
1 N-Channel
Бренд:
Infineon Technologies
Күз уақыты:
4 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
12 ns
Зауыттық буманың саны:
1000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
79 ns
Қосудың әдеттегі кешігу уақыты:
23 ns
Бөлім # Бүркеншік аттар:
IPB60R060P7 SP001664882
Tags
IPB60R0, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 60 mOhm 67 nC CoolMOS™ Power Mosfet - D2PAK
***et
CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK
***nell
MOSFET, N-CH, 600V, 48A, TO-263
***ark
Mosfet, N-Ch, 600V, 48A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.049Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB60R060P7ATMA1
DISTI # V72:2272_18787574
Infineon Technologies AGHIGH POWER_NEW890
  • 500:$3.9910
  • 250:$4.2699
  • 100:$4.6830
  • 25:$4.8540
  • 10:$5.3930
  • 1:$6.9707
IPB60R060P7ATMA1
DISTI # V36:1790_18787574
Infineon Technologies AGHIGH POWER_NEW0
  • 1000000:$2.8090
  • 500000:$2.8120
  • 100000:$3.0510
  • 10000:$3.4740
  • 1000:$3.5450
IPB60R060P7ATMA1
DISTI # IPB60R060P7ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1692In Stock
  • 500:$4.3294
  • 100:$5.0857
  • 10:$6.2070
  • 1:$6.9100
IPB60R060P7ATMA1
DISTI # IPB60R060P7ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1692In Stock
  • 500:$4.3294
  • 100:$5.0857
  • 10:$6.2070
  • 1:$6.9100
IPB60R060P7ATMA1
DISTI # IPB60R060P7ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 2000:$3.3677
  • 1000:$3.5449
IPB60R060P7ATMA1
DISTI # 33704475
Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$5.2188
IPB60R060P7ATMA1
DISTI # 32882183
Infineon Technologies AGHIGH POWER_NEW890
  • 2:$6.9707
IPB60R060P7ATMA1
DISTI # IPB60R060P7
Infineon Technologies AGCoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK (Alt: IPB60R060P7)
RoHS: Compliant
Min Qty: 1000
Asia - 400
  • 50000:$3.4949
  • 25000:$3.5463
  • 10000:$3.5993
  • 5000:$3.6538
  • 3000:$3.7680
  • 2000:$3.8895
  • 1000:$4.0192
IPB60R060P7ATMA1
DISTI # IPB60R060P7ATMA1
Infineon Technologies AGCoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK - Tape and Reel (Alt: IPB60R060P7ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$2.9900
  • 6000:$3.0900
  • 4000:$3.1900
  • 2000:$3.2900
  • 1000:$3.3900
IPB60R060P7ATMA1
DISTI # SP001664882
Infineon Technologies AGCoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK (Alt: SP001664882)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 10000:€2.5900
  • 6000:€2.7900
  • 4000:€2.9900
  • 2000:€3.1900
  • 1000:€3.2900
IPB60R060P7ATMA1
DISTI # 49AC7993
Infineon Technologies AGMOSFET, N-CH, 600V, 48A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:48A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes150
  • 500:$4.0400
  • 250:$4.5000
  • 100:$4.7500
  • 50:$4.9900
  • 25:$5.2300
  • 10:$5.4700
  • 1:$6.4400
IPB60R060P7ATMA1
DISTI # 726-IPB60R060P7ATMA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
592
  • 1:$6.3800
  • 10:$5.4200
  • 100:$4.7000
  • 250:$4.4600
  • 500:$4.0000
  • 1000:$3.3700
  • 2000:$3.2000
IPB60R060P7ATMA1Infineon Technologies AGSingle N-Channel 600 V 60 mOhm 67 nC CoolMOS Power Mosfet - D2PAK
RoHS: Not Compliant
1000Reel
  • 1000:$3.1800
IPB60R060P7ATMA1
DISTI # 2841641
Infineon Technologies AGMOSFET, N-CH, 600V, 48A, TO-263
RoHS: Compliant
146
  • 1000:$4.8300
  • 500:$4.9300
  • 250:$5.1900
  • 100:$5.4900
  • 10:$6.2100
  • 1:$6.6400
IPB60R060P7ATMA1
DISTI # 2841641
Infineon Technologies AGMOSFET, N-CH, 600V, 48A, TO-263406
  • 500:£3.1100
  • 250:£3.4700
  • 100:£3.6500
  • 10:£4.2100
  • 1:£5.4700
IPB60R060P7ATMA1
DISTI # XSFP00000158368
Infineon Technologies AGSingle N-Channel 600 V 60 mOhm 67 nCCoolMOSPowerMosfet - D2PAK
RoHS: Compliant
2000 in Stock0 on Order
  • 2000:$4.2400
  • 1000:$4.5400
Сурет Бөлім № Сипаттама
XR33052HD-F

Mfr.#: XR33052HD-F

OMO.#: OMO-XR33052HD-F

RS-422/RS-485 Interface IC 3.0V-5.5V RS-485 RS-422 Transceivers
IPD60R180P7ATMA1

Mfr.#: IPD60R180P7ATMA1

OMO.#: OMO-IPD60R180P7ATMA1

MOSFET
REF3025AIDBZR

Mfr.#: REF3025AIDBZR

OMO.#: OMO-REF3025AIDBZR

Voltage References 2.5V 50ppm/DegC 50uA SOT23-3 Series
IRF7749L1TRPBF

Mfr.#: IRF7749L1TRPBF

OMO.#: OMO-IRF7749L1TRPBF

MOSFET N-Ch 60V 1.1mOhm 200nC 2.9V Hexfet
STPSC10H065GY-TR

Mfr.#: STPSC10H065GY-TR

OMO.#: OMO-STPSC10H065GY-TR

Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
VB30202C-M3/4W

Mfr.#: VB30202C-M3/4W

OMO.#: OMO-VB30202C-M3-4W

Schottky Diodes & Rectifiers 30A 200V Trench Stky Rectifier
VN800PS-E

Mfr.#: VN800PS-E

OMO.#: OMO-VN800PS-E

Power Switch ICs - Power Distribution VIPower High Side 135mOhm 0.7A 36V
LTC-2723E

Mfr.#: LTC-2723E

OMO.#: OMO-LTC-2723E

LED Displays & Accessories 4 Digit, Orange
REF3025AIDBZR

Mfr.#: REF3025AIDBZR

OMO.#: OMO-REF3025AIDBZR-TEXAS-INSTRUMENTS

Voltage References 2.5V 50ppm/DegC 50uA SOT23-3 Series
IPD60R180P7ATMA1

Mfr.#: IPD60R180P7ATMA1

OMO.#: OMO-IPD60R180P7ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 650V 18A TO252-3
Қол жетімділік
Қор:
572
Тапсырыс бойынша:
2555
Саны енгізіңіз:
IPB60R060P7ATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
6,38 $
6,38 $
10
5,42 $
54,20 $
100
4,70 $
470,00 $
250
4,46 $
1 115,00 $
500
4,00 $
2 000,00 $
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