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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| FQI4P40TU DISTI # FQI4P40TU-ND | ON Semiconductor | MOSFET P-CH 400V 3.5A I2PAK RoHS: Compliant Min Qty: 1000 Container: Tube | Limited Supply - Call | |
| FQI4P40TU DISTI # 512-FQI4P40TU | ON Semiconductor | MOSFET 400V P-Channel QFET RoHS: Compliant | 0 | |
| FQI4P40TU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.5A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 40 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: FQI4N80TU OMO.#: OMO-FQI4N80TU |
MOSFET 800V N-Channel QFET |
|
Mfr.#: FQI40N10 OMO.#: OMO-FQI40N10-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: FQI44N10TU OMO.#: OMO-FQI44N10TU-1190 |
MOSFET |
|
|
Mfr.#: FQI47P06 OMO.#: OMO-FQI47P06-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: FQI4N20 OMO.#: OMO-FQI4N20-1190 |
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
|
Mfr.#: FQI4N20L OMO.#: OMO-FQI4N20L-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: FQI4N20TU |
MOSFET N-CH 200V 3.6A I2PAK |
|
|
Mfr.#: FQI4N25TU |
MOSFET N-CH 250V 3.6A I2PAK |
|
|
Mfr.#: FQI4N25TUFSC OMO.#: OMO-FQI4N25TUFSC-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: FQI4N80 OMO.#: OMO-FQI4N80-1190 |
Жаңа және түпнұсқа |