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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSP318S E6327 DISTI # BSP318SE6327-ND | Infineon Technologies AG | MOSFET N-CH 60V 2.6A SOT-223 RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP318SE6327 DISTI # 726-BSP318SE6327 | Infineon Technologies AG | MOSFET N-Ch 60V 2.6A SOT-223-3 RoHS: Not compliant | 0 | |
| BSP318SE6327 | Infineon Technologies AG | 2000 | ||
| BSP318SE6327 | Infineon Technologies AG | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | Europe - 43371 | |
| BSP318S-E6327 | Infineon Technologies AG | 262 | ||
| BSP318SE6327 | INSTOCK | 1396 | ||
| BSP318SE6327 | Infineon Technologies AG | INSTOCK | 2000 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BSP318S H6327 OMO.#: OMO-BSP318S-H6327 |
MOSFET N-Ch 60V 2.6A SOT-223-3 |
|
|
Mfr.#: BSP318SH6327XTSA1 OMO.#: OMO-BSP318SH6327XTSA1 |
MOSFET N-Ch 60V 2.6A SOT-223-3 |
|
Mfr.#: BSP318S OMO.#: OMO-BSP318S-1190 |
MOSFET, N CHANNEL, 60V, 2.6A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2.6A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.07ohm, Rds(on) Test Voltage Vgs:4.5V, |
|
Mfr.#: BSP318S E6327 |
MOSFET N-CH 60V 2.6A SOT-223 |
|
|
Mfr.#: BSP318S H6327 OMO.#: OMO-BSP318S-H6327-1190 |
Trans MOSFET N-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R |
|
|
Mfr.#: BSP318SE6327 OMO.#: OMO-BSP318SE6327-1190 |
MOSFET N-Ch 60V 2.6A SOT-223-3 |
|
|
Mfr.#: BSP318SH6327 OMO.#: OMO-BSP318SH6327-1190 |
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP318SH6327XTSA1 |
MOSFET N-CH 60V 2.6A |
|
|
Mfr.#: BSP318SL6327 OMO.#: OMO-BSP318SL6327-1190 |
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP318SL6327HTSA1 |
MOSFET N-CH 60V 2.6A SOT-223 |