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PGA26E07BA

PGA26E07BA
Mfr. #:
PGA26E07BA
Өндіруші:
Panasonic
Сипаттама:
MOSFET MOSFET 600VDC 70mohm X-GaN
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
PGA26E07BA Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
PGA26E07BA Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Tags
PGA26E0, PGA26, PGA2, PGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***asonic SCT
GaN Power Devices, 600V, DFN 8x8, RoHS
PGA26E X-GaN Power Transistors
Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.
X-GaN Power Solutions
Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.
Бөлім № Mfg. Сипаттама Қор Бағасы
PGA26E07BA
DISTI # 667-PGA26E07BA		Panasonic Electronic ComponentsMOSFET MOSFET 600VDC 70mohm X-GaN
RoHS: Compliant		29
  • 1:$35.4300
  • 10:$33.4600
  • 25:$31.4900
PGA26E07BA-SWEVB008
DISTI # 667-PGA26E07BASWEV8		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 70mOhm X-GaN 1/2 Bridge EVB
RoHS: Compliant		15
  • 1:$400.0000
PGA26E07BA-SWEVB006
DISTI # 667-PGA26E07BASWEVB6		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 70mOhm X-GaN Chopper EVB
RoHS: Compliant		2
  • 1:$375.0000
PGA26E07BA-DB001
DISTI # 667-PGA26E07BADAB001		Panasonic Electronic ComponentsPower Management IC Development Tools SMD-ThruHole ConvKit 600VDC 70mohm X-GaN
RoHS: Compliant		0
  • 1:$55.0000
Сурет Бөлім № Сипаттама
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA

 MOSFET MOSFET 600VDC 190mohm X-GaN
PGA26E07BA

Mfr.#: PGA26E07BA

OMO.#: OMO-PGA26E07BA

 MOSFET MOSFET 600VDC 70mohm X-GaN
PGA26E07-DB001

Mfr.#: PGA26E07-DB001

OMO.#: OMO-PGA26E07-DB001-1190

 Жаңа және түпнұсқа
PGA26E07-SWEVB008

Mfr.#: PGA26E07-SWEVB008

OMO.#: OMO-PGA26E07-SWEVB008-1190

 Жаңа және түпнұсқа
PGA26E07BA

Mfr.#: PGA26E07BA

OMO.#: OMO-PGA26E07BA-1190

 MOSFET MOSFET 600VDC 70mohm X-GaN
PGA26E19-DB001

Mfr.#: PGA26E19-DB001

OMO.#: OMO-PGA26E19-DB001-1190

 Жаңа және түпнұсқа
PGA26E19-SWEVB008

Mfr.#: PGA26E19-SWEVB008

OMO.#: OMO-PGA26E19-SWEVB008-1190

 Жаңа және түпнұсқа
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA-1190

 MOSFET MOSFET 600VDC 190mohm X-GaN
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
4000
Саны енгізіңіз:
PGA26E07BA ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
47,24 $
47,24 $
10
44,87 $
448,73 $
100
42,51 $
4 251,15 $
500
40,15 $
20 074,90 $
1000
37,79 $
37 788,00 $
-ден бастаңыз
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