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RQ3E130BNTB

RQ3E130BNTB
Mfr. #:
RQ3E130BNTB
Өндіруші:
Rohm Semiconductor
Сипаттама:
MOSFET 4.5V Drive Nch MOSFET
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
RQ3E130BNTB Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
RQ3E130BNTB Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ROHM жартылай өткізгіш
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
HSMT-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
13 A
Rds On - ағызу көзіне қарсылық:
4.4 mOhms
Vgs th - Gate-Source шекті кернеуі:
1 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
36 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
2 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Ролик
Транзистор түрі:
1 N-Channel
Бренд:
ROHM жартылай өткізгіш
Күз уақыты:
20 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
34 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
64 ns
Қосудың әдеттегі кешігу уақыты:
14 ns
Бөлім # Бүркеншік аттар:
RQ3E130BN
Tags
RQ3E130B, RQ3E13, RQ3E1, RQ3E, RQ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V ±13A 8-Pin HSMT Embossed Tape and Reel
***nell
MOSFET, N-CH, 30V, 39A, 150DEG C, 16W; Transistor Polarity: N Channel; Continuous Drain Current Id: 39A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 16W; Transistor Case Style: HSMT; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Electronics
MOSFET N-CH 30V 13A HSMT8
***i-Key
MOSFET N-CH 30V 13A 8HSMT
***et
Trans MOSFET N-CH 30V 16A 8-Pin Power 33 T/R
***el Electronic
RENESAS - ICL7660AIBAZA-T - Régulateur de tension pompe de charge DC/DC réglable, 1,5V à 12V, -12V à -1,5V/45mA, NSOIC-8
***rchild Semiconductor
This device has been designed specifically to improve theefficiency of DC/DC converters. Using new techniques inMOSFET construction, the various components of gate chargeand capacitance have been optimized to reduce switchinglosses. Low gate resistance and very low Miller charge enableexcellent performance with both adaptive and fixed dead timegate drive circuits. Very low rDS(on) has been maintained toprovide an extremely versatile device.
***ure Electronics
Single N-Channel 30 V 5 mOhm 26 nC OptiMOS™ Power Mosfet - TSDSON-8
***ment14 APAC
MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***(Formerly Allied Electronics)
Fairchild FDS8896 N-channel MOSFET Transistor; 15 A; 30 V; 8-Pin SOIC
***emi
N-Channel PowerTrench® MOSFET 30V, 15A, 6.0mΩ
***ure Electronics
N-Channel 30 V 6 mOhm SMT PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***ure Electronics
N-Channel 30 V 7 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 15A, 7.0mΩ
***ment14 APAC
N CHANNEL MOSFET, 30V, 15A, SOIC; Transi; N CHANNEL MOSFET, 30V, 15A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V
***rchild Semiconductor
This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***ure Electronics
Single N-Channel 30 V 4.5 mOhm 34 nC OptiMOS™ Power Mosfet - TSDSON-8
***ment14 APAC
MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:40A; Power Dissipation Pd:48W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
N-Channel 30 V 80 A 5 mO 34 nC SMT OptiMOS Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 80A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Бөлім № Mfg. Сипаттама Қор Бағасы
RQ3E130BNTB
DISTI # 30597548		ROHM SemiconductorTrans MOSFET N-CH 30V 13A 8-Pin HSMT T/R
RoHS: Compliant		3020
  • 34:$0.7575
RQ3E130BNTB
DISTI # RQ3E130BNTBCT-ND		ROHM SemiconductorMOSFET N-CH 30V 13A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2482In Stock
  • 1000:$0.1558
  • 500:$0.2017
  • 100:$0.2567
  • 10:$0.3440
  • 1:$0.4000
RQ3E130BNTB
DISTI # RQ3E130BNTBDKR-ND		ROHM SemiconductorMOSFET N-CH 30V 13A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2482In Stock
  • 1000:$0.1558
  • 500:$0.2017
  • 100:$0.2567
  • 10:$0.3440
  • 1:$0.4000
RQ3E130BNTB
DISTI # RQ3E130BNTBTR-ND		ROHM SemiconductorMOSFET N-CH 30V 13A HSMT8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.1184
  • 15000:$0.1290
  • 6000:$0.1379
  • 3000:$0.1469
RQ3E130BNTB
DISTI # C1S625901169810		ROHM SemiconductorTrans MOSFET N-CH 30V 13A 8-Pin HSMT T/R
RoHS: Compliant		3020
  • 3000:$0.2720
  • 1000:$0.2900
  • 500:$0.3130
  • 100:$0.3870
  • 50:$0.4230
  • 10:$0.6060
RQ3E130BNTB
DISTI # RQ3E130BNTB		ROHM SemiconductorTrans MOSFET N-CH 30V ±13A 8-Pin HSMT Embossed Tape and Reel (Alt: RQ3E130BNTB)
RoHS: Compliant
Min Qty: 1
Container: Reel		Europe - 0
  • 1000:€0.1359
  • 500:€0.1459
  • 100:€0.1579
  • 50:€0.1729
  • 25:€0.2109
  • 10:€0.2719
  • 1:€0.3809
RQ3E130BNTB
DISTI # RQ3E130BNTB		ROHM SemiconductorTrans MOSFET N-CH 30V ±13A 8-Pin HSMT Embossed Tape and Reel - Tape and Reel (Alt: RQ3E130BNTB)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1139
  • 18000:$0.1169
  • 12000:$0.1239
  • 6000:$0.1319
  • 3000:$0.1399
RQ3E130BNTB
DISTI # 82AC3043		ROHM SemiconductorMOSFET, N-CH, 30V, 39A, 150DEG C, 16W,Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes1980
  • 1000:$0.1630
  • 500:$0.1800
  • 250:$0.1980
  • 100:$0.2160
  • 50:$0.2770
  • 25:$0.3380
  • 10:$0.3990
  • 1:$0.5250
RQ3E130BNTB
DISTI # 755-RQ3E130BNTB		ROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
RoHS: Compliant		2123
  • 1:$0.5200
  • 10:$0.3950
  • 100:$0.2140
  • 1000:$0.1610
  • 3000:$0.1380
  • 9000:$0.1300
  • 24000:$0.1190
  • 45000:$0.1140
RQ3E130BNTBROHM Semiconductor 80
  • 72:$0.7000
  • 19:$0.8400
  • 1:$1.4000
RQ3E130BNTBROHM Semiconductor 100
  • 1:¥5.7960
  • 100:¥3.2863
  • 1500:¥2.0835
  • 3000:¥1.5522
RQ3E130BNTBROHM SemiconductorRoHS(ship within 1day)100
  • 1:$1.0800
  • 10:$0.6300
  • 50:$0.3900
  • 100:$0.3400
  • 500:$0.2900
  • 1000:$0.2800
RQ3E130BNTB
DISTI # 2965340		ROHM SemiconductorMOSFET, N-CH, 30V, 39A, 150DEG C, 16W1980
  • 500:£0.1470
  • 250:£0.1530
  • 100:£0.1570
  • 25:£0.2740
  • 5:£0.2870
RQ3E130BNTB
DISTI # 2965340		ROHM SemiconductorMOSFET, N-CH, 30V, 39A, 150DEG C, 16W
RoHS: Compliant		1980
  • 500:$0.2400
  • 250:$0.2520
  • 100:$0.2760
  • 25:$0.5460
  • 5:$0.5770
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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1985
Саны енгізіңіз:
RQ3E130BNTB ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,52 $
0,52 $
10
0,40 $
3,95 $
100
0,21 $
21,40 $
1000
0,16 $
161,00 $
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