We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| HGTG10N120BND DISTI # C1S541901484134 | ON Semiconductor | Trans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 140 |
|
| HGTG10N120BND DISTI # HGTG10N120BND-ND | ON Semiconductor | IGBT 1200V 35A 298W TO247 RoHS: Compliant Min Qty: 1 Container: Tube | 855In Stock |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 | Asia - 0 | |
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 Container: Tube | Americas - 0 |
|
| HGTG10N120BND DISTI # 98B1928 | ON Semiconductor | SINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes | 0 |
|
| HGTG10N120BND. DISTI # 16AC0004 | Fairchild Semiconductor Corporation | DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes | 0 | |
| HGTG10N120BND | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant | 485 |
|
| HGTG10N120BND | ON Semiconductor | HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247 RoHS: Compliant | 75Tube |
|
| HGTG10N120BND DISTI # 512-HGTG10N120BND | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Compliant | 29 |
|
| HGTG10N120BND_Q DISTI # 512-HGTG10N120BND_Q | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Not compliant | 0 | |
| HGTG10N120BND | Harris Semiconductor | 20 | ||
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Transistor: IGBT,1.2kV,17A,298W,TO247 | 429 |
|
| HGTG10N120BND | Fairchild Semiconductor Corporation | RoHS: Compliant | Europe - 1130 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: HGTG10N120BND OMO.#: OMO-HGTG10N120BND |
IGBT Transistors 35A 1200V N-Ch |
|
Mfr.#: HGTG10N120BND |
IGBT 1200V 35A 298W TO247 |
|
Mfr.#: HGTG10N120 OMO.#: OMO-HGTG10N120-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: HGTG10N120BN OMO.#: OMO-HGTG10N120BN-1190 |
Transistor: IGBT, 1.2kV, 17A, 298W, TO247-3 |
|
|
Mfr.#: HGTG10N120BND 10N120BND |
Жаңа және түпнұсқа |
|
|
Mfr.#: HGTG10N120BND,HGTG10N120 |
Жаңа және түпнұсқа |
|
|
Mfr.#: HGTG10N120BND,HGTG10N120B, |
Жаңа және түпнұсқа |
|
|
Mfr.#: HGTG10N120BND_NL OMO.#: OMO-HGTG10N120BND-NL-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: HGTG10N120BNS OMO.#: OMO-HGTG10N120BNS-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: HGTG10N120BND_Q OMO.#: OMO-HGTG10N120BND-Q-1190 |
IGBT Transistors 35A 1200V N-Ch |