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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| HGTG10N120BND DISTI # 32727600 | ON Semiconductor | NPTPIGBT TO247 35A 1200V | 31950 |
|
| HGTG10N120BND DISTI # 32417875 | ON Semiconductor | NPTPIGBT TO247 35A 1200V | 357 |
|
| HGTG10N120BND DISTI # HGTG10N120BND-ND | ON Semiconductor | IGBT 1200V 35A 298W TO247 RoHS: Compliant Min Qty: 1 Container: Tube | 787In Stock |
|
| HGTG10N120BND DISTI # V36:1790_06359369 | ON Semiconductor | NPTPIGBT TO247 35A 1200V | 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 Container: Tube | Americas - 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 | Asia - 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| HGTG10N120BND. DISTI # 16AC0004 | Fairchild Semiconductor Corporation | DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes | 0 |
|
| HGTG10N120BND DISTI # 98B1928 | ON Semiconductor | SINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes | 0 |
|
| HGTG10N120BND | ON Semiconductor | HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247 RoHS: Compliant | 50Tube |
|
| HGTG10N120BND DISTI # 512-HGTG10N120BND | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Compliant | 642 |
|
| HGTG10N120BND_Q DISTI # 512-HGTG10N120BND_Q | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Not compliant | 0 | |
| HGTG10N120BN | Harris Semiconductor | 45 | ||
| HGTG10N120BND | Harris Semiconductor | 20 | ||
| HGTG10N120BND | Harris Semiconductor | 23 | ||
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Transistor: IGBT,1.2kV,17A,298W,TO247-3 | 227 |
|
| HGTG10N120BND | Fairchild Semiconductor Corporation | RoHS: Compliant | 1130 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: HGTG10N120BND OMO.#: OMO-HGTG10N120BND |
IGBT Transistors 35A 1200V N-Ch |
|
Mfr.#: HGTG10N120BND |
IGBT 1200V 35A 298W TO247 |
|
Mfr.#: HGTG10N120 OMO.#: OMO-HGTG10N120-1190 |
Жаңа және түпнұсқа |
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Mfr.#: HGTG10N120BN OMO.#: OMO-HGTG10N120BN-1190 |
Transistor: IGBT, 1.2kV, 17A, 298W, TO247-3 |
|
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Mfr.#: HGTG10N120BND,HGTG10N120 |
Жаңа және түпнұсқа |
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Mfr.#: HGTG10N120BND,HGTG10N120B, |
Жаңа және түпнұсқа |
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Mfr.#: HGTG10N120BNDTU OMO.#: OMO-HGTG10N120BNDTU-1190 |
Жаңа және түпнұсқа |
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Mfr.#: HGTG10N120BND_NL OMO.#: OMO-HGTG10N120BND-NL-1190 |
Жаңа және түпнұсқа |
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Mfr.#: HGTG10N120BNS OMO.#: OMO-HGTG10N120BNS-1190 |
Жаңа және түпнұсқа |
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Mfr.#: HGTG10N120BND_Q OMO.#: OMO-HGTG10N120BND-Q-1190 |
IGBT Transistors 35A 1200V N-Ch |