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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSP373 E6327 DISTI # BSP373E6327-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP373E6327 DISTI # BSP373E6327 | Infineon Technologies AG | - Bulk (Alt: BSP373E6327) RoHS: Not Compliant Min Qty: 1563 Container: Bulk | Americas - 0 |
|
| BSP373E6327 | Infineon Technologies AG | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 2 |
|
| BSP373 E6327 | Siemens | 196 | ||
| BSP373E-6327 | Siemens | 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET | 1173 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BSP373NH6327XTSA1 OMO.#: OMO-BSP373NH6327XTSA1 |
MOSFET N-Ch 100V 1.8A SOT-223-3 |
|
Mfr.#: BSP373 _ OMO.#: OMO-BSP373--1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSP373-E6327 OMO.#: OMO-BSP373-E6327-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSP373E6327 OMO.#: OMO-BSP373E6327-1190 |
- Bulk (Alt: BSP373E6327) |
|
|
Mfr.#: BSP373L6327 OMO.#: OMO-BSP373L6327-1190 |
Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSP373L6327HTSA1 |
MOSFET N-CH 100V 1.7A SOT-223 |
|
|
Mfr.#: BSP373N OMO.#: OMO-BSP373N-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSP373N H6327 OMO.#: OMO-BSP373N-H6327-1190 |
Trans MOSFET N-CH 100V 1.8A T/R |
|
|
Mfr.#: BSP373NH6327 OMO.#: OMO-BSP373NH6327-1190 |
100V,1.8A,N-Ch Small-Signal MOSFET |
|
|
Mfr.#: BSP373NH6327XTSA1 |
MOSFET N-CH 100V 1.7A SOT-223 |
