IPA60R280CFD7XKSA1

IPA60R280CFD7XKSA1
Mfr. #:
IPA60R280CFD7XKSA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET LOW POWER_NEW
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPA60R280CFD7XKSA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPA60R280CFD7XKSA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-220FP-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
600 V
Идентификатор - үздіксіз төгу тогы:
6 A
Rds On - ағызу көзіне қарсылық:
237 mOhms
Vgs th - Gate-Source шекті кернеуі:
3.5 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
18 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
24 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
CoolMOS
Қаптама:
Түтік
Серия:
CoolMOS CFD7
Транзистор түрі:
1 N-Channel
Бренд:
Infineon Technologies
Күз уақыты:
9 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
14 ns
Зауыттық буманың саны:
500
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
53 ns
Қосудың әдеттегі кешігу уақыты:
17 ns
Бөлім # Бүркеншік аттар:
IPA60R280CFD7 SP001634136
Tags
IPA60R280C, IPA60R28, IPA60R2, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor Low Power 280mΩ 24W 600V PG-TO 220 FullPAK
***ark
Mosfet, N-Ch, 600V, 6A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.237Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Бөлім № Mfg. Сипаттама Қор Бағасы
IPA60R280CFD7XKSA1
DISTI # V36:1790_18786376
Infineon Technologies AGLOW POWER_NEW0
  • 500000:$0.8963
  • 250000:$0.8999
  • 50000:$1.2940
  • 5000:$2.0420
  • 500:$2.1700
IPA60R280CFD7XKSA1
DISTI # IPA60R280CFD7XKSA1-ND
Infineon Technologies AGMOSFET N-CH TO220FP-3
RoHS: Compliant
Min Qty: 1
Container: Tube
351In Stock
  • 5000:$1.0094
  • 2500:$1.0482
  • 500:$1.3588
  • 100:$1.6539
  • 25:$1.9412
  • 10:$2.0580
  • 1:$2.2900
IPA60R280CFD7XKSA1
DISTI # IPA60R280CFD7XKSA1
Infineon Technologies AGCoolMOS CFD7 Power Transistor Low Power 280mΩ 24W 600V PG-TO 220 FullPAK - Rail/Tube (Alt: IPA60R280CFD7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 5000:$0.9389
  • 3000:$0.9559
  • 2000:$0.9889
  • 1000:$1.0269
  • 500:$1.0649
IPA60R280CFD7XKSA1
DISTI # SP001634136
Infineon Technologies AGCoolMOS CFD7 Power Transistor Low Power 280mΩ 24W 600V PG-TO 220 FullPAK (Alt: SP001634136)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.8789
  • 500:€0.9119
  • 100:€0.9469
  • 50:€0.9849
  • 25:€1.0259
  • 10:€1.1189
  • 1:€1.2309
IPA60R280CFD7XKSA1
DISTI # 43AC9321
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.237ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes0
  • 1000:$1.0800
  • 500:$1.3000
  • 100:$1.4800
  • 10:$1.8600
  • 1:$2.1900
IPA60R280CFD7XKSA1
DISTI # 726-IPA60R280CFD7XKS
Infineon Technologies AGMOSFET LOW POWER_NEW
RoHS: Compliant
0
  • 1:$2.1700
  • 10:$1.8400
  • 100:$1.4700
  • 500:$1.2900
  • 1000:$1.0700
IPA60R280CFD7XKSA1
DISTI # 2807978
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220FP0
  • 500:£0.9470
  • 250:£1.0100
  • 100:£1.0700
  • 10:£1.3600
  • 1:£1.8100
IPA60R280CFD7XKSA1
DISTI # 2807978
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220FP
RoHS: Compliant
0
  • 1000:$1.6000
  • 500:$1.6900
  • 250:$1.9500
  • 100:$2.3100
  • 10:$2.8300
  • 1:$3.2400
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MOSFET N-channel 600 V, 0.037Ohm typ., 62A MDmesh DM6 Power MOSFET in a TO-247 package
IAUT300N10S5N015ATMA1

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IAUT260N10S5N019ATMA1

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Schottky Diodes & Rectifiers 30V, 2 A low VF MEGA Schottky barrier rectifier
STF16N60M6

Mfr.#: STF16N60M6

OMO.#: OMO-STF16N60M6

MOSFET N-channel 600 V, 0.29 Ohm typ., 12 A MDmesh M6 Power MOSFET in a TO-220FP package
STF13N60DM2

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OMO.#: OMO-STF13N60DM2

MOSFET N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package
R-78B5.0-2.0

Mfr.#: R-78B5.0-2.0

OMO.#: OMO-R-78B5-0-2-0-RECOM-POWER

2A DC/DC-CONVERTER 'INNOLINE'
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1-INFINEON-TECHNOLOGIES

MOSFET_(75V,120V(
STF16N60M6

Mfr.#: STF16N60M6

OMO.#: OMO-STF16N60M6-STMICROELECTRONICS

N-CHANNEL 600V M6 POWER MOSFET
STW70N60DM6

Mfr.#: STW70N60DM6

OMO.#: OMO-STW70N60DM6-STMICROELECTRONICS

N-CHANNEL 600 V, 0.037OHM TYP.,
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
3500
Саны енгізіңіз:
IPA60R280CFD7XKSA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
2,17 $
2,17 $
10
1,84 $
18,40 $
100
1,47 $
147,00 $
500
1,29 $
645,00 $
1000
1,07 $
1 070,00 $
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