IPT60R150G7XTMA1

IPT60R150G7XTMA1
Mfr. #:
IPT60R150G7XTMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET HIGH POWER NEW
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPT60R150G7XTMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPT60R150G7XTMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
HSOF-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
600 V
Идентификатор - үздіксіз төгу тогы:
17 A
Rds On - ағызу көзіне қарсылық:
129 mOhms
Vgs th - Gate-Source шекті кернеуі:
3 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
23 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
106 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Ролик
Серия:
CoolMOS G7
Транзистор түрі:
1 N-Channel
Бренд:
Infineon Technologies
Күз уақыты:
6 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
5 ns
Зауыттық буманың саны:
2000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
56 ns
Қосудың әдеттегі кешігу уақыты:
17 ns
Бөлім # Бүркеншік аттар:
IPT60R150G7 SP001579346
Tags
IPT60R1, IPT60, IPT6, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
MOSFET, N-CH, 600V, 17A, 106W, HSOF
***ark
Mosfet, N-Ch, 600V, 17A, 106W, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.129Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The CoolMOS C7 Gold series (G7) for the first time brings together the benefits of the improved 600V CoolMOS C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. | Summary of Features: Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G; Enables best-in-class R DS(on) in smallest footprint | Benefits: Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept; Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements; Production cost reduction by moving to SMD through quicker assembly times | Target Applications: Telecom; Server; Solar; Industrial SMPS
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ C7 Gold (G7) Power MOSFETs
Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.
Бөлім № Mfg. Сипаттама Қор Бағасы
IPT60R150G7XTMA1
DISTI # V36:1790_16563206
Infineon Technologies AGHIGH POWER_NEW0
  • 2000000:$1.5110
  • 1000000:$1.5130
  • 200000:$1.6190
  • 20000:$1.7850
  • 2000:$1.8120
IPT60R150G7XTMA1
DISTI # V72:2272_16563206
Infineon Technologies AGHIGH POWER_NEW0
    IPT60R150G7XTMA1
    DISTI # IPT60R150G7XTMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 650V 17A HSOF-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    1799In Stock
    • 1000:$1.9641
    • 500:$2.3289
    • 100:$2.7357
    • 10:$3.3390
    • 1:$3.7200
    IPT60R150G7XTMA1
    DISTI # IPT60R150G7XTMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 650V 17A HSOF-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    1799In Stock
    • 1000:$1.9641
    • 500:$2.3289
    • 100:$2.7357
    • 10:$3.3390
    • 1:$3.7200
    IPT60R150G7XTMA1
    DISTI # IPT60R150G7XTMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 650V 17A HSOF-8
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 2000:$1.8115
    IPT60R150G7XTMA1
    DISTI # IPT60R150G7XTMA1
    Infineon Technologies AGTrans MOSFET N 650V 17A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT60R150G7XTMA1)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel
    Americas - 0
    • 12000:$1.5900
    • 20000:$1.5900
    • 8000:$1.6900
    • 2000:$1.7900
    • 4000:$1.7900
    IPT60R150G7XTMA1
    DISTI # SP001579346
    Infineon Technologies AGTrans MOSFET N 650V 17A 8-Pin HSOF T/R (Alt: SP001579346)
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape and Reel
    Europe - 0
    • 20000:€1.4900
    • 8000:€1.5900
    • 12000:€1.5900
    • 4000:€1.7900
    • 2000:€2.2900
    IPT60R150G7XTMA1
    DISTI # 84AC6844
    Infineon Technologies AGMOSFET, N-CH, 600V, 17A, 106W, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.129ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2385
    • 1000:$1.8300
    • 500:$2.1700
    • 250:$2.4200
    • 100:$2.5600
    • 50:$2.6800
    • 25:$2.8100
    • 10:$2.9400
    • 1:$3.4600
    IPT60R150G7XTMA1
    DISTI # 726-IPT60R150G7XTMA1
    Infineon Technologies AGMOSFET HIGH POWER NEW
    RoHS: Compliant
    1816
    • 1:$3.4300
    • 10:$2.9100
    • 100:$2.5300
    • 250:$2.4000
    • 500:$2.1500
    • 1000:$1.8100
    • 2000:$1.7200
    • 4000:$1.6600
    IPT60R150G7XTMA1
    DISTI # 2983374
    Infineon Technologies AGMOSFET, N-CH, 600V, 17A, 106W, HSOF
    RoHS: Compliant
    2385
    • 1000:$2.6000
    • 500:$2.8200
    • 250:$3.1400
    • 100:$3.3000
    • 10:$3.8000
    • 1:$5.0300
    IPT60R150G7XTMA1
    DISTI # 2983374
    Infineon Technologies AGMOSFET, N-CH, 600V, 17A, 106W, HSOF2385
    • 500:£1.5600
    • 250:£1.7400
    • 100:£1.8300
    • 10:£2.1100
    • 1:£2.7900
    Сурет Бөлім № Сипаттама
    1EDI20N12AFXUMA1

    Mfr.#: 1EDI20N12AFXUMA1

    OMO.#: OMO-1EDI20N12AFXUMA1

    Gate Drivers DRIVER IC
    STP24N60M6

    Mfr.#: STP24N60M6

    OMO.#: OMO-STP24N60M6

    MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a TO-220 package
    STO33N60M6

    Mfr.#: STO33N60M6

    OMO.#: OMO-STO33N60M6

    MOSFET N-channel 600 V, 105 mOhm typ., 26 A MDmesh M6 Power MOSFET in a TO-LL package
    VS-1EFU06HM3/I

    Mfr.#: VS-1EFU06HM3/I

    OMO.#: OMO-VS-1EFU06HM3-I

    Rectifiers If(AV) 1A Vr 600V AEC-Q101 Qualified
    BSC050NE2LS

    Mfr.#: BSC050NE2LS

    OMO.#: OMO-BSC050NE2LS

    MOSFET N-Ch 25V 58A TDSON-8 OptiMOS
    IPB50R140CPATMA1

    Mfr.#: IPB50R140CPATMA1

    OMO.#: OMO-IPB50R140CPATMA1

    MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP
    STB24N60M6

    Mfr.#: STB24N60M6

    OMO.#: OMO-STB24N60M6

    MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a D2PAK package
    1EDI20N12AFXUMA1

    Mfr.#: 1EDI20N12AFXUMA1

    OMO.#: OMO-1EDI20N12AFXUMA1-INFINEON-TECHNOLOGIES

    Gate Drivers DRIVER IC
    STP24N60M6

    Mfr.#: STP24N60M6

    OMO.#: OMO-STP24N60M6-STMICROELECTRONICS

    NCHANNEL 600 V 105 MOHM TYP. 22
    BSC050NE2LS

    Mfr.#: BSC050NE2LS

    OMO.#: OMO-BSC050NE2LS-1190

    Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1984
    Саны енгізіңіз:
    IPT60R150G7XTMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    3,43 $
    3,43 $
    10
    2,91 $
    29,10 $
    100
    2,53 $
    253,00 $
    250
    2,40 $
    600,00 $
    500
    2,15 $
    1 075,00 $
    1000
    1,81 $
    1 810,00 $
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