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BSC050NE2LS

BSC050NE2LS
Mfr. #:
BSC050NE2LS
Өндіруші:
Infineon Technologies
Сипаттама:
Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSC050NE2LS Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
BSC050NE2LS Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші
Infineon Technologies
Өнім санаты
FETs - жалғыз
Сериялар
OptiMOS
Қаптама
Digi-ReelR балама орамасы
Бөлік бүркеншік аттар
BSC050NE2LSATMA1 BSC050NE2LSXT SP000756340
Монтаждау стилі
SMD/SMT
Сауда атауы
OptiMOS
Пакет-қорап
8-PowerTDFN
Технология
Си
Жұмыс температурасы
-55°C ~ 150°C (TJ)
Монтаждау түрі
Беттік орнату
Арналар саны
1 Channel
Жабдықтаушы-құрылғы-пакет
PG-TDSON-8
Конфигурация
Бір төрттік ағызу үштік көзі
FET түрі
MOSFET N-арнасы, металл оксиді
Қуат – Макс
28W
Транзистор түрі
1 N-Channel
Ағызу-көзге-кернеу-Vdss
25V
Кіріс-сыйымдылық-Ciss-Vds
760pF @ 12V
FET мүмкіндігі
Стандартты
Ағымдағы-Үздіксіз-ағызу-Id-25°C
39A (Ta), 58A (Tc)
Rds-On-Max-Id-Vgs
5 mOhm @ 30A, 10V
Vgs-th-Max-Id
2V @ 250μA
Gate-Charge-Qg-Vgs
10.4nC @ 10V
Pd-қуат-диссипация
28 W
Максималды-жұмыс температурасы
+ 150 C
Ең төменгі жұмыс температурасы
- 55 C
Күз уақыты
2 ns
Көтерілу уақыты
2.2 ns
Vgs-қақпа-көзі-кернеу
20 V
Id-үздіксіз-ағызу-ток
58 A
Vds-ағызу-көз-бұзу-кернеу
25 V
Rds-On-Drain-Source-Resistance
5 mOhms
Транзистор-полярлық
N-арна
Әдеттегі-өшіру-кідірту уақыты
11.4 nS
Qg-Gate-Заряд
10.4 nC
Tags
BSC050NE, BSC050N, BSC050, BSC05, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
BSC050NE2LSATMA1
DISTI # V72:2272_06384786		Infineon Technologies AGTrans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R
RoHS: Compliant		81
  • 3000:$0.2502
  • 1000:$0.3404
  • 500:$0.4110
  • 250:$0.4155
  • 100:$0.4201
  • 25:$0.5900
  • 10:$0.5975
  • 1:$0.6909
BSC050NE2LSATMA1
DISTI # BSC050NE2LSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 25V 39A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		69500In Stock
  • 1000:$0.4164
  • 500:$0.5274
  • 100:$0.6801
  • 10:$0.8610
  • 1:$0.9700
BSC050NE2LSATMA1
DISTI # BSC050NE2LSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 25V 39A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		69500In Stock
  • 1000:$0.4164
  • 500:$0.5274
  • 100:$0.6801
  • 10:$0.8610
  • 1:$0.9700
BSC050NE2LSATMA1
DISTI # BSC050NE2LSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 25V 39A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		65000In Stock
  • 5000:$0.3638
BSC050NE2LS
DISTI # 30581305		Infineon Technologies AGTrans MOSFET N-CH 25V 39A 8-Pin TDSON EP
RoHS: Compliant		12248
  • 100:$0.5597
  • 50:$0.6847
  • 25:$1.0276
BSC050NE2LSATMA1
DISTI # 30535195		Infineon Technologies AGTrans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R
RoHS: Compliant		81
  • 3000:$0.2502
  • 1000:$0.3403
  • 500:$0.4109
  • 250:$0.4155
  • 100:$0.4201
  • 25:$0.5900
  • 23:$0.5975
BSC050NE2LS
DISTI # BSC050NE2LS		Infineon Technologies AGTrans MOSFET N-CH 25V 39A 8-Pin TDSON T/R (Alt: BSC050NE2LS)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 5000
  • 5000:$0.2979
  • 10000:$0.2857
  • 15000:$0.2818
  • 25000:$0.2708
  • 50000:$0.2673
  • 125000:$0.2607
  • 250000:$0.2543
BSC050NE2LSATMA1
DISTI # BSC050NE2LSATMA1		Infineon Technologies AGTrans MOSFET N-CH 25V 39A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC050NE2LSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3239
  • 10000:$0.3229
  • 20000:$0.3219
  • 30000:$0.3209
  • 50000:$0.3209
BSC050NE2LSATMA1
DISTI # 47Y7994		Infineon Technologies AGMOSFET Transistor, N Channel, 58 A, 25 V, 0.0042 ohm, 10 V, 2 V RoHS Compliant: Yes0
  • 1:$0.9200
  • 10:$0.7600
  • 25:$0.6700
  • 50:$0.5800
  • 100:$0.4900
  • 250:$0.4570
  • 500:$0.4250
  • 1000:$0.3920
BSC050NE2LSATMA1.
DISTI # 23AC2919		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:58A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:28W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3210
  • 10000:$0.3090
  • 20000:$0.3030
  • 30000:$0.2980
  • 50000:$0.2970
BSC050NE2LS
DISTI # 726-BSC050NE2LS		Infineon Technologies AGMOSFET N-Ch 25V 58A TDSON-8 OptiMOS
RoHS: Compliant		29083
  • 1:$0.9200
  • 10:$0.7600
  • 100:$0.4900
  • 1000:$0.3920
BSC050NE2LSATMA1
DISTI # 726-BSC050NE2LSATMA1		Infineon Technologies AGMOSFET N-Ch 25V 58A TDSON-8 OptiMOS
RoHS: Compliant		4711
  • 1:$0.9200
  • 10:$0.7600
  • 100:$0.4900
  • 1000:$0.3920
BSC050NE2LSInfineon Technologies AG 3099
    BSC050NE2LSATMA1
    DISTI # 8275340P    		Infineon Technologies AGMOSFET N-CH 39A 25V OPTIMOS TDSON8EP, RL2425
    • 125:£0.1420
    BSC050NE2LS
    DISTI # BSC050NE2LS    		Infineon Technologies AGPower Field-Effect Transistor, 23AI(D),60V,0.0028ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET
    RoHS: Compliant    		4792
    • 1:$0.6700
    • 500:$0.6400
    • 1000:$0.6100
    BSC050NE2LSATMA1
    DISTI # 2443420    		Infineon Technologies AGMOSFET, N CH, 25V, 58A, TDSON-8
    RoHS: Compliant    		0
    • 1:$1.4600
    • 10:$1.2100
    • 100:$0.7750
    • 1000:$0.6210
    • 5000:$0.5240
    BSC050NE2LSInfineon Technologies AG25V,58A,N Channel Power MOSFET15
    • 1:$0.5200
    • 100:$0.4400
    • 500:$0.3900
    • 1000:$0.3700
    BSC050NE2LS
    DISTI # C1S322000437294    		Infineon Technologies AGTrans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R
    RoHS: Compliant    		12248
    • 100:$0.4390
    • 50:$0.5370
    • 10:$0.8060
    BSC050NE2LSATMA1
    DISTI # C1S322000232635    		Infineon Technologies AGTrans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R
    RoHS: Compliant    		3381
    • 250:$0.4155
    • 100:$0.4201
    • 25:$0.5900
    • 10:$0.5975
    BSC050NE2LSATMA1
    DISTI # 2443420    		Infineon Technologies AGMOSFET, N CH, 25V, 58A, TDSON-8
    RoHS: Compliant    		0
    • 5:£0.7430
    • 25:£0.4280
    • 100:£0.4200
    • 250:£0.4110
    • 500:£0.3950
    Сурет Бөлім № Сипаттама
    BSC0500NSIATMA1

    Mfr.#: BSC0500NSIATMA1

    OMO.#: OMO-BSC0500NSIATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 35A TDSON-8
    BSC050NE2LSG

    Mfr.#: BSC050NE2LSG

    OMO.#: OMO-BSC050NE2LSG-1190

    		 Жаңа және түпнұсқа
    BSC057N03LS

    Mfr.#: BSC057N03LS

    OMO.#: OMO-BSC057N03LS-1190

    		 Жаңа және түпнұсқа
    BSC057N03MS G

    Mfr.#: BSC057N03MS G

    OMO.#: OMO-BSC057N03MS-G-1190

    		 MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3M
    BSC057N08NS3G

    Mfr.#: BSC057N08NS3G

    OMO.#: OMO-BSC057N08NS3G-1190

    		 Trans MOSFET N-CH 80V 16A 8-Pin TDSON T/R (Alt: BSC057N08NS3 G)
    BSC059N03S G

    Mfr.#: BSC059N03S G

    OMO.#: OMO-BSC059N03S-G-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 73A TDSON-8
    BSC059N03S-G

    Mfr.#: BSC059N03S-G

    OMO.#: OMO-BSC059N03S-G-1190

    		 Жаңа және түпнұсқа
    BSC059N03SG

    Mfr.#: BSC059N03SG

    OMO.#: OMO-BSC059N03SG-1190

    		 Жаңа және түпнұсқа
    BSC059N03SG , TDA8274AHN

    Mfr.#: BSC059N03SG , TDA8274AHN

    OMO.#: OMO-BSC059N03SG-TDA8274AHN-1190

    		 Жаңа және түпнұсқа
    BSC059N04LS

    Mfr.#: BSC059N04LS

    OMO.#: OMO-BSC059N04LS-1190

    		 Жаңа және түпнұсқа
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1500
    Саны енгізіңіз:
    BSC050NE2LS ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    0,38 $
    0,38 $
    10
    0,36 $
    3,62 $
    100
    0,34 $
    34,33 $
    500
    0,32 $
    162,10 $
    1000
    0,31 $
    305,20 $
    -ден бастаңыз
    Ең жаңа өнімдер
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