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HGTG18N120BND

HGTG18N120BND
Mfr. #:
HGTG18N120BND
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
HGTG18N120BND Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
IGBT транзисторлары
RoHS:
Y
Технология:
Си
Пакет/қорап:
TO-247-3
Орнату стилі:
Тесік арқылы
Конфигурация:
Бойдақ
Коллектор-эмиттер кернеуі VCEO Max:
1200 V
Коллектор-эмиттер қанығу кернеуі:
2.45 V
Шықпа эмитентінің максималды кернеуі:
20 V
Үздіксіз коллектор тогы 25 С:
54 A
Pd - қуаттың шығыны:
390 W
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Серия:
HGTG18N120BND
Қаптама:
Түтік
Үздіксіз коллектор ток Ic макс:
54 A
Биіктігі:
20.82 mm
Ұзындығы:
15.87 mm
Ені:
4.82 mm
Бренд:
ON Semiconductor / Fairchild
Үздіксіз коллекторлық ток:
54 A
Шлюз-эмиттер ағып кету тогы:
+/- 250 nA
Өнім түрі:
IGBT транзисторлары
Зауыттық буманың саны:
450
Ішкі санат:
IGBT
Бөлім # Бүркеншік аттар:
HGTG18N120BND_NL
Бірлік салмағы:
0.225401 oz
Tags
HGTG18N120BND, HGTG18N120B, HGTG18, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***y
    S***y
    FR

    recu rapide

    2019-06-30
    R***e
    R***e
    LT

    Thanks!

    2019-05-28
    D***v
    D***v
    RU

    Very long shipping and seller did not extend the protection period.

    2019-04-16
***Components
In a Tube of 30, ON Semiconductor HGTG18N120BND IGBT, 54 A 1200 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Rail
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
HGTG18N120BND Series 1200 V 54 A Flange Mount NPT N-Channel IGBT-TO-247
***inecomponents.com
54A, 1200V, NPT Series N-Channel IGBTwith Anti-Parallel Hyperfast Diode
***i-Key
IGBT NPT N-CHAN 1200V 54A TO-247
***eco
ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ
***ser
IGBTs 36A, 1200V, N-Ch
***Semiconductor
IGBT, 1200V, NPT
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.45V; Power Dissipation, Pd:390W; Package/Case:TO-247; C-E Breakdown Voltage:1200V ;RoHS Compliant: Yes
***rchild Semiconductor
HGTG18N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***nell
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:1200V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:390W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic @ Vce Sat:18A; Current, Icm Pulsed:160A; Device Marking:HGTG18N120BND; Power, Pd:390W; Time, Rise:22ns
***ment14 APAC
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:390W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic @ Vce Sat:18A; Current Ic Continuous a Max:54A; Device Marking:HGTG18N120BND; Fall Time Max:140ns; Fall Time Typ:90ns; Package / Case:TO-247; Power Dissipation Max:390W; Power Dissipation Pd:390W; Power Dissipation Pd:390W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
Бөлім № Mfg. Сипаттама Қор Бағасы
HGTG18N120BND
DISTI # HGTG18N120BND-ND		ON SemiconductorIGBT 1200V 54A 390W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		450In Stock
  • 1350:$3.6624
  • 900:$4.2050
  • 450:$4.6119
  • 10:$5.8330
  • 1:$6.4600
HGTG18N120BND
DISTI # HGTG18N120BND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG18N120BND)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 450
    HGTG18N120BND
    DISTI # 58K8901    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8901)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 1:$5.6400
    • 900:$5.1600
    HGTG18N120BND
    DISTI # 58K8901    		ON SemiconductorSINGLE IGBT, 1.2KV, 54A, TO-247,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2.45V,Power Dissipation Pd:390W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes0
    • 1:$7.7100
    • 10:$7.0000
    • 25:$6.6800
    • 50:$6.2500
    • 100:$5.8200
    • 250:$5.5800
    • 500:$5.1000
    HGTG18N120BND
    DISTI # 97K1398    		ON SemiconductorIGBT Single Transistor, General Purpose, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes0
    • 1:$6.5500
    • 10:$5.9500
    • 25:$5.6800
    • 50:$5.3300
    • 100:$4.9700
    • 250:$4.7600
    • 500:$4.3600
    HGTG18N120BND
    DISTI # 512-HGTG18N120BND    		ON SemiconductorIGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
    RoHS: Compliant    		436
    • 1:$6.1500
    • 10:$5.5600
    • 25:$5.3000
    • 100:$4.6000
    • 250:$4.4000
    HGTG18N120BND
    DISTI # 9034285P    		ON SemiconductorIGBT N-CH 1200V 54A NPT TO-247, TU14
    • 15:£4.6500
    • 30:£4.4300
    • 100:£3.8400
    • 300:£3.6800
    HGTG18N120BND
    DISTI # 9034285    		ON SemiconductorIGBT N-CH 1200V 54A NPT TO-247, EA58
    • 1:£5.1400
    • 15:£4.6500
    • 30:£4.4300
    • 100:£3.8400
    • 300:£3.6800
    HGTG18N120BNDFairchild Semiconductor CorporationINSTOCK62
      HGTG18N120BND
      DISTI # 1095111      		ON SemiconductorIGBT, N, TO-247
      RoHS: Compliant      		9
      • 1:$9.7400
      • 10:$8.8000
      • 25:$8.3900
      • 100:$7.2800
      • 250:$6.9700
      HGTG18N120BND
      DISTI # 1095111      		ON SemiconductorIGBT, N, TO-247
      RoHS: Compliant      		757
      • 1:£5.2700
      • 5:£4.7800
      • 10:£4.1300
      • 50:£3.8600
      • 100:£3.5800
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      Қол жетімділік
      Қор:
      663
      Тапсырыс бойынша:
      2646
      Саны енгізіңіз:
      HGTG18N120BND ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      6,21 $
      6,21 $
      10
      5,28 $
      52,80 $
      100
      4,57 $
      457,00 $
      250
      4,34 $
      1 085,00 $
      500
      3,89 $
      1 945,00 $
      2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
      -ден бастаңыз
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