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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| NE3511S02-A DISTI # NE3511S02-A-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 13.5DB S02 RoHS: Compliant Min Qty: 70 Container: Bulk | Limited Supply - Call | |
| NE3511S02A DISTI # NE3511S02A | California Eastern Laboratories (CEL) | Trans JFET N-CH 4V 70mA 4-Pin Micro-X (Alt: NE3511S02A) RoHS: Compliant Min Qty: 1 | Europe - 0 | |
| NE3511S02-A DISTI # 551-NE3511S02-A | California Eastern Laboratories (CEL) | RF JFET Transistors X to Ku Band Super Low Noise Amp N-Ch RoHS: Compliant | 0 | |
| NE3511S02-A DISTI # NE3511S02-A | Renesas Electronics Corporation | RF SMALL SIGNAL TRANSISTOR HFET RoHS: Compliant | 0 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: NE3515S02-A OMO.#: OMO-NE3515S02-A |
RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH |
|
Mfr.#: NE3514S02-T1C-A(K) OMO.#: OMO-NE3514S02-T1C-A-K--1152 |
RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET |
|
|
Mfr.#: NE3514S02-T1D-A OMO.#: OMO-NE3514S02-T1D-A-318 |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
|
|
Mfr.#: NE3512S02-T1D-A OMO.#: OMO-NE3512S02-T1D-A-318 |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
|
Mfr.#: NE3514S02-A OMO.#: OMO-NE3514S02-A-CEL |
RF JFET Transistors K Band Super Low Noise Amp N-Ch |
|
|
Mfr.#: NE3515S02-T1C-A OMO.#: OMO-NE3515S02-T1C-A-CEL |
RF JFET Transistors Super Low Noise Pseudomorphic |
|
|
Mfr.#: NE3510M04-T1-A OMO.#: OMO-NE3510M04-T1-A-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: NE3512S02-T1D-A/JT OMO.#: OMO-NE3512S02-T1D-A-JT-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: NE3513M04-T2-A OMO.#: OMO-NE3513M04-T2-A-CEL |
FET RF 4V 12GHZ M04 4SMD |
|
|
Mfr.#: NE3513M04-TB2 OMO.#: OMO-NE3513M04-TB2-1190 |
Жаңа және түпнұсқа |
