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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| NE3514S02-A DISTI # C1S525000486338 | Renesas Electronics Corporation | Trans JFET N-CH 4V 70mA HJFET 4-Pin Case S02 RoHS: Compliant | 130 |
|
| NE3514S02-A DISTI # NE3514S02-A-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 10DB S02 RoHS: Compliant Min Qty: 70 Container: * | Limited Supply - Call | |
| NE3514S02-A DISTI # 551-NE3514S02-A | California Eastern Laboratories (CEL) | RF JFET Transistors K Band Super Low Noise Amp N-Ch RoHS: Compliant | 0 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: NE3515S02-A OMO.#: OMO-NE3515S02-A |
RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH |
|
Mfr.#: NE3514S02-T1C-A(K) OMO.#: OMO-NE3514S02-T1C-A-K--1152 |
RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET |
|
Mfr.#: NE3512S02-A OMO.#: OMO-NE3512S02-A-CEL |
RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch |
|
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Mfr.#: NE3511S02-T1C-A OMO.#: OMO-NE3511S02-T1C-A-CEL |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
|
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Mfr.#: NE3510M04-07-T2 OMO.#: OMO-NE3510M04-07-T2-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: NE3510M04-T1-A OMO.#: OMO-NE3510M04-T1-A-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: NE3512S02-T1C OMO.#: OMO-NE3512S02-T1C-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: NE3512S02-T1D OMO.#: OMO-NE3512S02-T1D-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: NE3513M04-TB2 OMO.#: OMO-NE3513M04-TB2-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: NE3517S03-T1C-A OMO.#: OMO-NE3517S03-T1C-A-CEL |
Trans JFET N-CH 4V 70mA GaAs HJFET 4-Pin Case S-03 T/R |
