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| PartNumber | ZXM62P02E6TA | ZXM62P02E6TAPBF | ZXM62P02E6TA-CUT TAPE |
| Description | MOSFET 20V P-Chnl HDMOS | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-26-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 2.3 A | - | - |
| Rds On Drain Source Resistance | 200 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 700 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.3 mm | - | - |
| Length | 3.1 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | ZXM62 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 1.8 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 1.5 S | - | - |
| Fall Time | 19.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15.4 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12 ns | - | - |
| Typical Turn On Delay Time | 4.1 ns | - | - |
| Unit Weight | 0.000529 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXM62P02E6TA | MOSFET 20V P-Chnl HDMOS | |
| ZXM62P02E6TA | Жаңа және түпнұсқа | ||
| ZXM62P02E6TAPBF | Жаңа және түпнұсқа | ||
| ZXM62P02E6TA-CUT TAPE | Жаңа және түпнұсқа |