 | | | |
| PartNumber | ZXM62N02E6 | ZXM62N02E6TA | ZXM62N02E6TAPBF |
| Description | Trans MOSFET N-CH 20V 3.2A Automotive 6-Pin SOT-23 T/R | ||
| Manufacturer | - | DIODES | - |
| Product Category | - | IC Chips | - |
| Series | - | ZXM62N02 | - |
| Packaging | - | Reel | - |
| Unit Weight | - | 0.000529 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | SOT-23-6 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 1.1 W | - |
| Fall Time | - | 10.4 ns | - |
| Rise Time | - | 10.4 ns | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 3.2 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Vgs th Gate Source Threshold Voltage | - | 0.7 V | - |
| Rds On Drain Source Resistance | - | 125 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 16.9 ns | - |
| Typical Turn On Delay Time | - | 4 ns | - |
| Qg Gate Charge | - | 6.3 nC | - |
| Forward Transconductance Min | - | 3.2 mS | - |
| Channel Mode | - | Enhancement | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXM62N03E6TA | MOSFET 30V N-Chnl HDMOS | |
| ZXM62N02E6 | Жаңа және түпнұсқа | ||
| ZXM62N02E6TA | Trans MOSFET N-CH 20V 3.2A Automotive 6-Pin SOT-23 T/R | ||
| ZXM62N02E6TAPBF | Жаңа және түпнұсқа | ||
| ZXM62N03E6 | Жаңа және түпнұсқа | ||
| ZXM62N03E6TA | MOSFET N-CH 30V 3.2A SOT-23-6 | ||
| ZXM62N03G | Жаңа және түпнұсқа | ||
| ZXM62N03GTA | Darlington Transistors MOSFET 30V N-Chnl HDMOS |