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| PartNumber | TSM160N10CZ C0G | TSM160N10CZ C0 | TSM160N10CZ |
| Description | MOSFET Power MOSFET, N-CHAN 100V, 160A, 5.5mOhm | MOSFET 100V N Channel Power Mosfet | MOSFET Power MOSFET, N-CHAN 100V, 160A, 5.5mOhm |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 160 A | 160 A | 160 A |
| Rds On Drain Source Resistance | 4.5 mOhms | 4.5 mOhms | 4.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 154 nC | 154 nC | 154 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 300 W | 300 W | 300 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Product | Rectifiers | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Fall Time | 45 ns | 45 ns | 45 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 40 ns | 40 ns | 40 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 85 ns | 85 ns | 85 ns |
| Typical Turn On Delay Time | 25 ns | 25 ns | 25 ns |
| Unit Weight | - | 0.211644 oz | 0.211644 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Taiwan Semiconductor |
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