 |  | | |
| PartNumber | TPH11003NL,LQ | TPH110 | TPH11003NL |
| Description | MOSFET N-Ch DTMOS VII-H 21W 510pF 32A 30V | ||
| Manufacturer | Toshiba | Toshiba Semiconductor and Storage | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOP-Advance-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 32 A | - | - |
| Rds On Drain Source Resistance | 12.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 7.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 21 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 0.95 mm | - | - |
| Length | 5 mm | - | - |
| Series | TPH11003NL | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 1.9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.1 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13.5 ns | - | - |
| Typical Turn On Delay Time | 7.5 ns | - | - |
| Unit Weight | 0.030018 oz | - | - |
| Package Case | - | 8-PowerVDFN | - |
| Operating Temperature | - | 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SOP Advance | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 1.6W | - |
| Drain to Source Voltage Vdss | - | 60V | - |
| Input Capacitance Ciss Vds | - | 2000pF @ 30V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 17A (Tc) | - |
| Rds On Max Id Vgs | - | 11.4 mOhm @ 8.5A, 10V | - |
| Vgs th Max Id | - | 2.5V @ 200μA | - |
| Gate Charge Qg Vgs | - | 23nC @ 10V | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Toshiba |
TPH11006NL,LQ | MOSFET U-MOSVIII-H 60V 40A 23nC MOSFET | |
| TPH11003NL,LQ | MOSFET N-Ch DTMOS VII-H 21W 510pF 32A 30V | ||
| TPH110 | Жаңа және түпнұсқа | ||
| TPH11003NL | Жаңа және түпнұсқа | ||
| TPH11003NL,LQ(S | Жаңа және түпнұсқа | ||
| TPH11003NLLQ | MOSFET PWR MOSFET TRANSISTOR | ||
| TPH11003NLLQ(S | Жаңа және түпнұсқа | ||
| TPH11006NL | Жаңа және түпнұсқа | ||
| TPH11006NL,LQ | MOSFET N-CH 60V 17A 8SOP | ||
| TPH11006NLLQ | MOSFET PWR MOSFET TRANSISTOR | ||
| TPH110FNHL1QCT-ND | Жаңа және түпнұсқа | ||
| TPH11003NLLQCT-ND | Жаңа және түпнұсқа | ||
| TPH11003NLLQDKR-ND | Жаңа және түпнұсқа | ||
| TPH11003NLLQTR-ND | Жаңа және түпнұсқа | ||
| TPH11006NLLQCT-ND | Жаңа және түпнұсқа | ||
| TPH11006NLLQDKR-ND | Жаңа және түпнұсқа | ||
| TPH11006NLLQTR-ND | Жаңа және түпнұсқа |