 |  | | |
| PartNumber | TK9J90E,S1E | TK9J90E | TK9J90E,S1E(S |
| Description | MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN | MOSFET N-CHANNEL 900V 9A TO-3P(N), TU | Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN |
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-3P(N)-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 900 V | - | - |
| Id Continuous Drain Current | 9 A | - | - |
| Rds On Drain Source Resistance | 1.3 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 46 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 20 mm | - | - |
| Length | 15.5 mm | - | - |
| Series | TK9J90E | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 35 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 40 ns | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 140 ns | - | - |
| Typical Turn On Delay Time | 80 ns | - | - |
| Unit Weight | 0.245577 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Toshiba |
TK9J90E,S1E | MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN | |
| TK9J90E,S1E | IGBT Transistors MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN | ||
| TK9J90E | MOSFET N-CHANNEL 900V 9A TO-3P(N), TU | ||
| TK9J90E,S1E(S | Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN | ||
| TK9J90ES1E | MOSFET MOSFET TRAN TO-3PN | ||
| TK9J90ES1E(S | Жаңа және түпнұсқа | ||
| TK9J90ES1E-ND | Жаңа және түпнұсқа |